VEMT2500X01, Phototransistors Reverse gullwing 470-1090nm +/-15 deg
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см. техническую документацию
см. техническую документацию
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Описание
Phototransistor Chip Silicon 850nm 2-Pin SMD T/R
Технические параметры
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Fabrication Technology | NPN Transistor |
| Half Intensity Angle Degrees (°) | 30 |
| Lens Color | Clear |
| Lens Shape Type | Domed |
| Material | Silicon |
| Maximum Collector Current (mA) | 50 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.4 |
| Maximum Collector-Emitter Voltage (V) | 20 |
| Maximum Dark Current (nA) | 100 |
| Maximum Emitter-Collector Voltage (V) | 7 |
| Maximum Light Current (uA) | 9000 |
| Maximum Operating Temperature (°C) | 100 |
| Maximum Power Dissipation (mW) | 100 |
| Minimum Operating Temperature (°C) | -40 |
| Mounting | Surface Mount |
| Number of Channels per Chip | 1 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 2 |
| Peak Wavelength (nm) | 850 |
| Phototransistor Type | Phototransistor |
| Pin Count | 2 |
| Polarity | NPN |
| Standard Package Name | SMD |
| Supplier Package | SMD |
| Type | Chip |
| Viewing Orientation | Top View |
| Angle of Half Sensitivity | 15 ° |
| Maximum Light Current | 9mA |
| Mounting Type | Surface Mount |
| Number of Pins | 2 |
| Package Type | GW |
| Series | VEMT |
Техническая документация
Datasheet
pdf, 148 КБ
Datasheet VEMT2500X01
pdf, 141 КБ
