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SI7998DP-T1-GE3, Trans MOSFET N-CH 30V 25A/30A 8-Pin PowerPAK SO T/R

Ном. номер: 8001006201
PartNumber: SI7998DP-T1-GE3
Производитель: Vishay
SI7998DP-T1-GE3, Trans MOSFET N-CH 30V 25A/30A 8-Pin PowerPAK SO T/R
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см. техническую документацию
102 руб.
2822 шт.,
срок 4-6 недель
от 10 шт. — 98.30 руб.
от 25 шт. — 97.50 руб.
Добавить в корзину 1 шт. на сумму 102 руб.

Технические параметры

EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.95
Product Category
Power MOSFET
Configuration
Dual Dual Drain
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Maximum Drain Source Voltage (V)
30
Maximum Gate Source Voltage (V)
±20
Maximum Continuous Drain Current (A)
30@Channel 2|25@Channel 1
Maximum Drain Source Resistance (mOhm)
5.3@10V@Channel 2|9.3@10V@Channel 1
Typical Gate Charge @ Vgs (nC)
32@10V|15.3@4.5V@Channel 2|8.2@4.5V@Channel 1|17@10V
Typical Gate Charge @ 10V (nC)
32@Channel 2|17@Channel 1
Typical Input Capacitance @ Vds (pF)
2000@15V@Channel 2|1100@15V@Channel 1
Maximum Power Dissipation (mW)
3600@Channel 1|4000@Channel 2
Typical Fall Time (ns)
10@Channel 1|13@Channel 2
Typical Rise Time (ns)
15@Channel 1|17@Channel 2
Typical Turn-Off Delay Time (ns)
35@Channel 2|22@Channel 1
Typical Turn-On Delay Time (ns)
20@Channel 1|26@Channel 2
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Automotive
No
Pin Count
8
Supplier Package
PowerPAK SO
Military
No
Mounting
Surface Mount
Package Height
1.07(Max)
Package Length
4.9
Package Width
5.89
PCB changed
8
Lead Shape
No Lead

Дополнительная информация

Datasheet SI7998DP-T1-GE3

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