SI4559ADY-T1-E3, MOSFET -60V Vds 20V Vgs SO-8 N&P PAIR
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см. техническую документацию
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120 руб.
Кратность заказа 2500 шт.
Добавить в корзину 2500 шт.
на сумму 300 000 руб.
Описание
Si4 TrenchFET® Power MOSFETs
Vishay / Siliconix Si4 TrenchFET® Power MOSFETs are used for amplifying electronic signals. These devices are available in N-channel, P-channel, and N- and P-channel versions. The Si4 MOSFETs offer different V GS and V DS options and temperature ranges. Vishay / Siliconix Si4 TrenchFET Power MOSFETs operate in an enhancement mode and are used for switching between electronic signals. These surface-mount MOSFETs are 100% R g and UIS tested.
Vishay / Siliconix Si4 TrenchFET® Power MOSFETs are used for amplifying electronic signals. These devices are available in N-channel, P-channel, and N- and P-channel versions. The Si4 MOSFETs offer different V GS and V DS options and temperature ranges. Vishay / Siliconix Si4 TrenchFET Power MOSFETs operate in an enhancement mode and are used for switching between electronic signals. These surface-mount MOSFETs are 100% R g and UIS tested.
Технические параметры
| Brand: | Vishay Semiconductors |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 10 ns, 30 ns |
| Forward Transconductance - Min: | 15 S, 8.5 S |
| Id - Continuous Drain Current: | 5.3 A, 3.9 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package / Case: | SOIC-8 |
| Part # Aliases: | SI4559ADY-E3 |
| Pd - Power Dissipation: | 3.1 W, 3.4 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 20 nC, 22 nC |
| Rds On - Drain-Source Resistance: | 58 mOhms, 120 mOhms |
| Rise Time: | 65 ns, 70 ns |
| Series: | SI4 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | TrenchFET |
| Transistor Polarity: | N-Channel, P-Channel |
| Transistor Type: | 1 N-Channel, 1 P-Channel |
| Typical Turn-Off Delay Time: | 15 ns, 40 ns |
| Typical Turn-On Delay Time: | 15 ns, 30 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Configuration | Dual Dual Drain |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 4.3@N Channel|3@P Channel |
| Maximum Drain Source Resistance (mOhm) | 58@10V@N Channel|120@10V@P Channel |
| Maximum Drain Source Voltage (V) | 60 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 2000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 2 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 8 |
| Pin Count | 8 |
| PPAP | No |
| Process Technology | TrenchFET |
| Product Category | Power MOSFET |
| Standard Package Name | SO |
| Supplier Package | SOIC N |
| Typical Fall Time (ns) | 10@N Channel|30@P Channel |
| Typical Gate Charge @ 10V (nC) | 13@N Channel|14.5@P Channel |
| Typical Gate Charge @ Vgs (nC) | 13@10V|6@4.5V@N Channel|14.5@10V|8@4.5V@P Channel |
| Typical Input Capacitance @ Vds (pF) | 650@15V@P Channel|665@15V@N Channel |
| Typical Rise Time (ns) | 65|15@N Channel|70|13@P Channel |
| Typical Turn-Off Delay Time (ns) | 15|20@N Channel|40|35@P Channel |
| Typical Turn-On Delay Time (ns) | 15|10@N Channel|30|10@P Channel |
