BC858BWT1G, Транзистор: PNP

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16 руб.

Кратность заказа 10 шт.

от 100 шт. — 9 руб.

от 300 шт. — 6.40 руб.

Добавить в корзину 10 шт. на сумму 160 руб.

Номенклатурный номер: 8017549901

Артикул: BC858BWT1G

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
HTS	8541.21.00.75
Type	PNP
Product Category	Bipolar Small Signal
Material	Si
Configuration	Single
Number of Elements per Chip	1
Maximum Collector Base Voltage (V)	30
Maximum Collector-Emitter Voltage (V)	30
Maximum Emitter Base Voltage (V)	5
Operating Junction Temperature (°C)	-55 to 150
Maximum Base Emitter Saturation Voltage (V)	0.9(Typ)@5mA@100mA\|0.7(Typ)@0.5mA@10mA
Maximum Collector-Emitter Saturation Voltage (V)	0.3@0.5mA@10mA\|0.65@5mA@100mA
Maximum DC Collector Current (A)	0.1
Maximum Collector Cut-Off Current (nA)	15
Minimum DC Current Gain	220@2mA@5V
Maximum Power Dissipation (mW)	150
Maximum Transition Frequency (MHz)	100(Min)
Minimum Operating Temperature (°C)	-55
Maximum Operating Temperature (°C)	150
Packaging	Tape and Reel
Automotive	No
Standard Package Name	SOT-323
Pin Count	3
Supplier Package	SC-70
Military	No
Mounting	Surface Mount
Package Height	0.85
Package Length	2.1
Package Width	1.24
PCB changed	3
Lead Shape	Gull-wing
Maximum Collector Base Voltage	-30 V
Maximum Collector Emitter Voltage	-30 V
Maximum DC Collector Current	-100 mA
Maximum Emitter Base Voltage	-5 V
Maximum Operating Frequency	100 MHz
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	150 mW
Mounting Type	Surface Mount
Package Type	SOT-323(SC-70)
Transistor Configuration	Single
Transistor Type	PNP
Вес, г	0.1

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