SBR05M60BLP-7, Диодный мост: однофазный; Urmax: 60В; If: 0,5А; Ifsm: 8А; SMT; SBR®
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Описание
SBR® Super Barrier Rectifiers
Diodes Inc SBR ® Super Barrier Rectifiers use a MOS manufacturing process to create a superior two-terminal device with a lower forward voltage than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes. SBR Diodes are designed for high power, low loss and fast switching applications. The presence of a MOS channel within its structure forms a low potential barrier for the majority carriers. That means SBR forward bias operation at low voltage is similar to a Schottky diode. The leakage current is lower than Schottky Diode in reverse bias due to the overlap of the P-N depletion layers and the absence of potential barrier reduction due to the image charge.
Diodes Inc SBR ® Super Barrier Rectifiers use a MOS manufacturing process to create a superior two-terminal device with a lower forward voltage than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes. SBR Diodes are designed for high power, low loss and fast switching applications. The presence of a MOS channel within its structure forms a low potential barrier for the majority carriers. That means SBR forward bias operation at low voltage is similar to a Schottky diode. The leakage current is lower than Schottky Diode in reverse bias due to the overlap of the P-N depletion layers and the absence of potential barrier reduction due to the image charge.
Технические параметры
Bridge Type | Single Phase |
Configuration | Single |
Diode Technology | Silicon Junction |
Maximum Operating Temperature | +150 °C |
Minimum Operating Temperature | -55 °C |
Mounting Type | Surface Mount |
Package Type | DFN4 |
Peak Average Forward Current | 500mA |
Peak Forward Voltage | 490mV |
Peak Non-Repetitive Forward Surge Current | 8A |
Peak Reverse Current | 20mA |
Peak Reverse Repetitive Voltage | 60V |
Pin Count | 4 |
Width | 3.1mm |
Automotive | No |
Diode Type | Super Barrier Rectifier |
ECCN (US) | EAR99 |
EU RoHS | Compliant |
Lead Shape | No Lead |
Mounting | Surface Mount |
Packaging | Tape and Reel |
Part Status | Active |
PCB changed | 4 |
Peak Average Forward Current (A) | 0.5 |
Peak Reverse Repetitive Voltage (V) | 60 |
PPAP | No |
Standard Package Name | DFN |
Supplier Package | DFN EP |
Brand: | Diodes Incorporated |
Configuration: | Quad |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
If - Forward Current: | 500 mA |
Ifsm - Forward Surge Current: | 8 A |
Ir - Reverse Current: | 100 uA |
Manufacturer: | Diodes Incorporated |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Package / Case: | U-DFN3030-4 |
Product Category: | Schottky Diodes & Rectifiers |
Product Type: | Schottky Diodes & Rectifiers |
Product: | Schottky Rectifiers |
Series: | SBR05 |
Subcategory: | Diodes & Rectifiers |
Technology: | Si |
Vf - Forward Voltage: | 490 mV |
Vr - Reverse Voltage: | 60 V |
Vrrm - Repetitive Reverse Voltage: | 60 V |
Вес, г | 0.02 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 88 КБ
Datasheet
pdf, 81 КБ
Datasheet SBR05M60BLP-7
pdf, 255 КБ
Дополнительная информация
Калькуляторы группы «Диодные мосты»
Типы корпусов импортных диодов