MJD122G, Trans Darlington NPN 100V 8A 1750mW 3-Pin(2+Tab) DPAK Tube
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см. техническую документацию
см. техническую документацию
180 руб.
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Описание
TRANSISTOR, NPN, 100V, 8A, TO-252-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:4MHz; Power Dissipation Pd:20W; DC Collector Current:8A; DC Current Gain hFE:1000hFE; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018); Operating Temperature Min:-65°C
Технические параметры
| EU RoHS | Compliant with Exemption |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.95 |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector-Emitter Voltage (V) | 100 |
| Maximum Collector Base Voltage (V) | 100 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Base Emitter Saturation Voltage (V) | 4.5@80mA@8A |
| Maximum Continuous DC Collector Current (A) | 8 |
| Maximum Collector Cut-Off Current (uA) | 10 |
| Maximum Collector-Emitter Saturation Voltage (V) | 4@80mA@8A|2@16mA@4A |
| Typical Current Gain Bandwidth (MHz) | 4(Min) |
| Minimum DC Current Gain | 1000@4A@4V|100@8A@4V |
| Maximum Power Dissipation (mW) | 1750 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Operating Temperature (°C) | 150 |
| Supplier Temperature Grade | Automotive |
| Packaging | Tube |
| Automotive | No |
| Pin Count | 3 |
| Supplier Package | DPAK |
| Standard Package Name | TO-252 |
| Military | No |
| Mounting | Surface Mount |
| Package Height | 2.38(Max) |
| Package Length | 6.73(Max) |
| Package Width | 6.22(Max) |
| PCB changed | 2 |
| Tab | Tab |
| Lead Shape | Gull-wing |
| Brand | ON Semiconductor |
| Collector- Base Voltage VCBO | 100 V |
| Collector- Emitter Voltage VCEO Max | 100 V |
| Continuous Collector Current | 8 A |
| DC Collector/Base Gain hfe Min | 1000 |
| DC Current Gain hFE Max | 12000 |
| Emitter- Base Voltage VEBO | 5 V |
| Factory Pack Quantity | 75 |
| Height | 2.38 mm |
| Length | 6.73 mm |
| Manufacturer | ON Semiconductor |
| Maximum Collector Cut-off Current | 10 uA |
| Maximum DC Collector Current | 8 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -65 C |
| Mounting Style | SMD/SMT |
| Package / Case | TO-252-3(DPAK) |
| Pd - Power Dissipation | 20 W |
| Product Category | Darlington Transistors |
| RoHS | Details |
| Series | MJD122 |
| Transistor Polarity | NPN |
| Width | 6.22 mm |
| Maximum Base Emitter Saturation Voltage | 4.5 V |
| Maximum Collector Base Voltage | 100 V |
| Maximum Collector Emitter Saturation Voltage | 4 V |
| Maximum Collector Emitter Voltage | 100 V |
| Maximum Continuous Collector Current | 8 A |
| Maximum Emitter Base Voltage | 5 V |
| Mounting Type | Surface Mount |
| Package Type | DPAK(TO-252) |
| Transistor Configuration | Single |
| Transistor Type | NPN |
| Вес, г | 1 |
Техническая документация
Datasheet
pdf, 103 КБ
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 136 КБ
MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP)
pdf, 100 КБ
Дополнительная информация
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