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STB60NF06T4

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см. техническую документацию

700 шт. со склада г.Москва, срок 13 дней

53 руб.

Кратность заказа 100 шт.

Добавить в корзину 100 шт. на сумму 5 300 руб.

Альтернативные предложения3

Номенклатурный номер: 8023500780

Бренд: STMicroelectronics

Описание

Транзисторы полевые

Описание Транзистор N-МОП, полевой, 60В 60A 110Вт 0,016Ом DІPak

Технические параметры

Automotive	Yes
Channel Mode	Enhancement
Channel Type	N
Configuration	Single
ECCN (US)	EAR99
EU RoHS	Compliant with Exemption
Lead Shape	Gull-wing
Maximum Continuous Drain Current (A)	60
Maximum Drain Source Resistance (mOhm)	16@10V
Maximum Drain Source Voltage (V)	60
Maximum Gate Source Voltage (V)	±20
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	110000
Minimum Operating Temperature (°C)	-65
Mounting	Surface Mount
Number of Elements per Chip	1
Packaging	Tape and Reel
Part Status	Active
PCB changed	2
Pin Count	3
PPAP	Unknown
Product Category	Power MOSFET
Standard Package Name	TO-263
Supplier Package	D2PAK
Tab	Tab
Typical Fall Time (ns)	20
Typical Gate Charge @ 10V (nC)	49
Typical Gate Charge @ Vgs (nC)	49@10V
Typical Input Capacitance @ Vds (pF)	1810@25V
Typical Rise Time (ns)	108
Typical Turn-Off Delay Time (ns)	43
Typical Turn-On Delay Time (ns)	16
Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	1000
Fall Time:	20 ns
Forward Transconductance - Min:	20 S
Id - Continuous Drain Current:	60 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-65 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	TO-263-3
Pd - Power Dissipation:	110 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	66 nC
Qualification:	AEC-Q101
Rds On - Drain-Source Resistance:	15 mOhms
Rise Time:	108 ns
Series:	STB60NF06
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Type:	MOSFET
Typical Turn-Off Delay Time:	43 ns
Typical Turn-On Delay Time:	16 ns
Vds - Drain-Source Breakdown Voltage:	60 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Case	D2PAK
Drain current	42A
Drain-source voltage	60V
Features of semiconductor devices	ESD protected gate
Gate-source voltage	±20V
Kind of channel	enhanced
Kind of package	reel, tape
Manufacturer	STMicroelectronics
On-state resistance	16mΩ
Polarisation	unipolar
Power dissipation	110W
Technology	SuperMesh™
Type of transistor	N-MOSFET
Brand	STMicroelectronics
Factory Pack Quantity	1000
Fall Time	20 ns
Forward Transconductance - Min	20 S
Height	4.6 mm
Id - Continuous Drain Current	60 A
Length	10.4 mm
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-65 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	TO-263-3
Pd - Power Dissipation	110 W
Rds On - Drain-Source Resistance	15 mOhms
Rise Time	108 ns
RoHS	Details
Series	STB60NF06
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Type	MOSFET
Typical Turn-Off Delay Time	43 ns
Typical Turn-On Delay Time	16 ns
Vds - Drain-Source Breakdown Voltage	60 V
Vgs - Gate-Source Voltage	20 V
Width	9.35 mm
Вес, г	2.5