AO3420

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см. техническую документацию

130 шт. со склада г.Москва, срок 4-9 дней

230 руб.

Мин. кол-во для заказа 2 шт.

от 5 шт. — 170 руб.

от 10 шт. — 144 руб.

от 100 шт. — 124.88 руб.

Добавить в корзину 2 шт. на сумму 460 руб.

Номенклатурный номер: 8007766043

Бренд: Нет торговой марки

Электроэлемент

Описание Транзистор: N-MOSFET, полевой, 20В, 5А, 0,9Вт, SOT23 Характеристики

Automotive	Unknown
Channel Mode	Enhancement
Channel Type	N
Configuration	Single
Maximum Continuous Drain Current - (A)	6
Maximum Drain Source Resistance - (mOhm)	24@10V
Maximum Drain Source Voltage - (V)	20
Maximum Gate Source Voltage - (V)	??12
Maximum Gate Threshold Voltage - (V)	1.1
Maximum Power Dissipation - (mW)	1400
Military	No
Number of Elements per Chip	1
Operating Temperature - (??C)	-55~150
Packaging	Tape and Reel
Pin Count	3
Standard Package Name	SOT-23
Supplier Package	SOT-23
Typical Gate Charge @ 10V - (nC)	12.5
Typical Gate Charge @ Vgs - (nC)	12.5@10VI6@4.5V
Typical Input Capacitance @ Vds - (pF)	525@10V
ECCN (US)	EAR99
EU RoHS	Compliant
Lead Shape	Gull-wing
Maximum Continuous Drain Current (A)	6
Maximum Diode Forward Voltage (V)	1
Maximum Drain Source Resistance (mOhm)	24 10V
Maximum Drain Source Voltage (V)	20
Maximum Gate Source Voltage (V)	±12
Maximum Gate Threshold Voltage (V)	1.1
Maximum Operating Temperature (°C)	150
Maximum Positive Gate Source Voltage (V)	12
Maximum Power Dissipation (mW)	1400
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Operating Junction Temperature (°C)	-55 to 150
Part Status	NRND
PCB changed	3
PPAP	Unknown
Product Category	Power MOSFET
Typical Fall Time (ns)	6
Typical Gate Charge @ 10V (nC)	12.5
Typical Gate Charge @ Vgs (nC)	12.5 10V\|6 4.5V
Typical Input Capacitance @ Vds (pF)	525 10V
Typical Rise Time (ns)	75
Typical Turn-Off Delay Time (ns)	20
Typical Turn-On Delay Time (ns)	3
Вес, г	0.1