JANTXV2N4957, Trans RF BJT PNP 30V 0.03A 200mW Bag
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16 140 руб.
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70 шт. со склада г.Москва, срок 3-5 недель |
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от 25 шт. —
10 087 руб.
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Добавить в корзину 1 шт.
на сумму 16 140 руб.
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Технические параметры
| EU RoHS | Not Compliant |
| ECCN (US) | EAR99 |
| Part Status | Obsolete |
| Type | PNP |
| Material | Si |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage (V) | 30 |
| Maximum Collector-Emitter Voltage (V) | 30 |
| Maximum Collector-Emitter Voltage Range (V) | 30 to 40 |
| Maximum Emitter Base Voltage (V) | 3 |
| Maximum DC Collector Current (A) | 0.03 |
| Maximum DC Collector Current Range (A) | 0.001 to 0.06 |
| Maximum Emitter Cut-Off Current (nA) | 100000 |
| Maximum Collector Cut-Off Current (nA) | 100000 |
| Operational Bias Conditions | 10V/2mA |
| Minimum DC Current Gain | 30@5mA@10V|20@2mA@10V|15@0.5mA@10V |
| Minimum DC Current Gain Range | 30 to 50|2 to 30 |
| Maximum Power Dissipation (mW) | 200 |
| Typical Power Gain (dB) | 25 |
| Maximum Noise Figure (dB) | 3.5 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Operating Temperature (°C) | 200 |
| Supplier Temperature Grade | Military |
| Automotive | No |
Дополнительная информация
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