NRVBD660CTG, Diode Schottky 60V 6A Automotive 3-Pin(2+Tab) DPAK Tube
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см. техническую документацию
см. техническую документацию
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41 руб.
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2028 шт. со склада г.Москва, срок 3-5 недель |
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Описание
ON Semiconductor Schottky Barrier Diodes
This ON Semiconductor Schottky power rectifier employs the Schottky barrier principle using a barrier metal to create the best forward voltage drop−reverse current exchange. Suitable for low voltage, high-frequency rectification as well as a freewheeling and polarity protection diode in a range of surface mount applications wherever a more compact size and weight are key.
This ON Semiconductor Schottky power rectifier employs the Schottky barrier principle using a barrier metal to create the best forward voltage drop−reverse current exchange. Suitable for low voltage, high-frequency rectification as well as a freewheeling and polarity protection diode in a range of surface mount applications wherever a more compact size and weight are key.
Технические параметры
| EU RoHS | Compliant with Exemption |
| ECCN (US) | EAR99 |
| Part Status | Active |
| Package Length | 6.73(Max) |
| Mounting | Surface Mount |
| Package Width | 6.22(Max) |
| Package Height | 2.38(Max) |
| Tab | Tab |
| PCB changed | 2 |
| Lead Shape | Gull-wing |
| Type | Schottky Diode |
| Configuration | Dual Common Cathode |
| Maximum DC Reverse Voltage (V) | 60 |
| Peak Reverse Repetitive Voltage (V) | 60 |
| Maximum Continuous Forward Current (A) | 6 |
| Peak Non-Repetitive Surge Current (A) | 75 |
| Peak Forward Voltage (V) | 0.9 |
| Peak Reverse Current (uA) | 100 |
| Maximum Junction Ambient Thermal Resistance | 80°C/W |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Operating Temperature (°C) | 175 |
| Packaging | Tube |
| Supplier Temperature Grade | Automotive |
| Automotive | Yes |
| AEC Qualified Number | AEC-Q101 |
| Standard Package Name | TO-252 |
| Pin Count | 3 |
| Supplier Package | DPAK |
| Military | No |
| Diode Configuration | Common Cathode |
| Number of Elements per Chip | 2 |
| Brand | ON Semiconductor |
| Package Type | DPAK (TO-252) |
| Maximum Continuous Forward Current | 6A |
| Mounting Type | Поверхностный монтаж |
| Maximum Forward Voltage Drop | 850mV |
| Pin Count | 3 |
| Peak Non-Repetitive Forward Surge Current | 75A |
| Diode Type | Schottky |
| Peak Reverse Repetitive Voltage | 60V |
| Diode Technology | Schottky |
| Конфигурация диода | Общий катод |
| Number of Elements per Chip | 2 |
| Brand | ON Semiconductor |
| Тип корпуса | DPAK (TO-252) |
| Максимальный непрерывный прямой ток | 6A |
| Тип монтажа | Поверхностный монтаж |
| Maximum Forward Voltage Drop | 850мВ |
| Pin Count | 3 |
| Peak Non-Repetitive Forward Surge Current | 75A |
| Diode Type | Шоттки |
| Пиковое обратное повторяющееся напряжение | 60V |
| Диодная технология | Диод Шоттки |
Дополнительная информация
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