SQD50N06-09L_GE3, MOSFET 60V 50A 136W AEC-Q101 Qualified

SQD50N06-09L_GE3, MOSFET 60V 50A 136W AEC-Q101 Qualified
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Номенклатурный номер: 8005284482
Артикул: SQD50N06-09L_GE3

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET
48V DC/DC Converters Vishay 48V DC/DC Converters are used in the products that need to remain 12V battery load while 48V battery is used in the vehicles. These converters can bring down 48V-12V, so the converter is a significant application for future cars. Different topologies are made possible with these devices like multiphase coupled and non-coupled inductors. Vishay offers a broad portfolio of solutions with standard devices like MOSFETs, diodes, resistors, capacitors, inductors, and customized magnetic solutions.

Технические параметры

Brand: Vishay Semiconductors
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: 2000
Fall Time: 8 ns
Forward Transconductance - Min: 62 S
Id - Continuous Drain Current: 50 A
Manufacturer: Vishay
Maximum Operating Temperature: +175 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Package/Case: DPAK-3(TO-252-3)
Pd - Power Dissipation: 136 W
Product Category: MOSFET
Product Type: MOSFET
Qg - Gate Charge: 72 nC
Qualification: AEC-Q101
Rds On - Drain-Source Resistance: 7.1 mOhms
Rise Time: 11 ns
Subcategory: MOSFETs
Technology: Si
Transistor Polarity: N-Channel
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 27 ns
Typical Turn-On Delay Time: 10 ns
Vds - Drain-Source Breakdown Voltage: 60 V
Vgs - Gate-Source Voltage: -20 V, +20 V
Vgs th - Gate-Source Threshold Voltage: 1.5 V
Вес, г 0.33

Техническая документация

Datasheet
pdf, 156 КБ

Дополнительная информация

Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов