BSS138PW.115

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7 руб.

6 руб.

Мин. кол-во для заказа 96 шт.

Добавить в корзину 96 шт. на сумму 576 руб.

Альтернативные предложения4

Номенклатурный номер: 8001776377

Транзисторы и сборки MOSFET

Описание Транзистор: N-MOSFET, полевой, 60В, 0,32А, 260мВт, SOT323

Корпус	SC703
кол-во в упаковке	3000
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	320 mA
Maximum Drain Source Resistance	1.6 Ω
Maximum Drain Source Voltage	60 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Gate Threshold Voltage	1.5V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	310 mW
Minimum Gate Threshold Voltage	0.9V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOT-323
Pin Count	3
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	0.72 nC @ 4.5 V
Width	1.35mm
Brand:	Nexperia
Channel Mode:	Enhancement
Factory Pack Quantity: Factory Pack Quantity:	3000
Id - Continuous Drain Current:	320 mA
Manufacturer:	Nexperia
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	SOT-323-3
Part # Aliases:	934064987115
Pd - Power Dissipation:	310 mW
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	720 pC
Qualification:	AEC-Q101
Rds On - Drain-Source Resistance:	1.6 Ohms
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	900 mV
Вес, г	0.02