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STP36NF06L

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см. техническую документацию

308 шт. со склада г.Москва

140 руб.

Мин. кол-во для заказа 28 шт.

от 50 шт. — 110 руб.

от 250 шт. — 96.69 руб.

Добавить в корзину 28 шт. на сумму 3 920 руб.

Альтернативные предложения4

Номенклатурный номер: 8001784192

Бренд: STMicroelectronics

Описание

Транзисторы и сборки MOSFET

Описание Транзистор N-МОП, полевой, 60В 30A 70Вт 0,048Ом TO220 Характеристики

Категория	Транзистор
Тип	полевой
Вид	MOSFET

Технические параметры

Корпус	to220ab
кол-во в упаковке	50
Automotive	Yes
Channel Mode	Enhancement
Channel Type	N
Configuration	Single
ECCN (US)	EAR99
EU RoHS	Compliant with Exemption
Lead Shape	Through Hole
Maximum Continuous Drain Current (A)	30
Maximum Diode Forward Voltage (V)	1.5
Maximum Drain Source Resistance (MOhm)	40@10V
Maximum Drain Source Voltage (V)	60
Maximum Gate Source Leakage Current (nA)	100
Maximum Gate Source Voltage (V)	±18
Maximum Gate Threshold Voltage (V)	2.5
Maximum IDSS (uA)	1
Maximum Operating Temperature (°C)	175
Maximum Positive Gate Source Voltage (V)	18
Maximum Power Dissipation (mW)	70000
Maximum Pulsed Drain Current @ TC=25°C (A)	120
Minimum Gate Threshold Voltage (V)	1
Minimum Operating Temperature (°C)	-55
Mounting	Through Hole
Number of Elements per Chip	1
Operating Junction Temperature (°C)	-55 to 175
Packaging	Tube
Part Status	Active
PCB changed	3
Pin Count	3
PPAP	Unknown
Process Technology	STripFET II
Product Category	Power MOSFET
Standard Package Name	TO
Supplier Package	TO-220AB
Supplier Temperature Grade	Automotive
Tab	Tab
Typical Fall Time (ns)	13
Typical Gate Charge @ Vgs (nC)	13@5V
Typical Gate Plateau Voltage (V)	4.2
Typical Gate to Drain Charge (nC)	7.8
Typical Gate to Source Charge (nC)	4.2
Typical Input Capacitance @ Vds (pF)	660@25V
Typical Output Capacitance (pF)	170
Typical Reverse Recovery Charge (nC)	107
Typical Reverse Recovery Time (ns)	55
Typical Reverse Transfer Capacitance @ Vds (pF)	70@25V
Typical Rise Time (ns)	80
Typical Turn-Off Delay Time (ns)	19
Typical Turn-On Delay Time (ns)	10
Maximum Continuous Drain Current	30 A
Maximum Drain Source Resistance	40 mΩ
Maximum Drain Source Voltage	60 V
Maximum Gate Source Voltage	-18 V, +18 V
Maximum Gate Threshold Voltage	2.5V
Maximum Operating Temperature	+175 °C
Maximum Power Dissipation	70 W
Minimum Gate Threshold Voltage	1V
Minimum Operating Temperature	-55 °C
Mounting Type	Through Hole
Package Type	TO-220
Series	STripFET
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	13 nC @ 5 V
Width	4.6mm
Brand	STMicroelectronics
Factory Pack Quantity	1000
Fall Time	13 ns
Forward Transconductance - Min	15 S
Height	9.15 mm
Id - Continuous Drain Current	30 A
Length	10.4 mm
Manufacturer	STMicroelectronics
Mounting Style	Through Hole
Number of Channels	1 Channel
Package / Case	TO-220-3
Pd - Power Dissipation	70 W
Rds On - Drain-Source Resistance	32 mOhms
Rise Time	80 ns
RoHS	Details
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Type	MOSFET
Typical Turn-Off Delay Time	19 ns
Typical Turn-On Delay Time	10 ns
Vds - Drain-Source Breakdown Voltage	60 V
Vgs - Gate-Source Voltage	18 V
Вес, г	2