STP11NK40Z
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см. техническую документацию
см. техническую документацию
679 шт. со склада г.Москва
67 руб.
Мин. кол-во для заказа 39 шт.
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56 руб.
от 350 шт. —
52.44 руб.
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Номенклатурный номер: 8001784216
Страна происхождения: КИТАЙ
Бренд / Производитель: STMicroelectronics
Описание
Транзисторы и сборки MOSFET
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:400V; On Resistance Rds(on):0.55ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipation Pd:110W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (17-Dec-2015); Alternate Case Style:SOT-78B; Avalanche Single Pulse Energy Eas:190mJ; Capacitance Ciss Typ:930pF; Current Id Max:9A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:550mohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pin Configuration:a; Power Dissipation Ptot Max:110W; Pulse Current Idm:36A; Reverse Recovery Time trr Typ:225ns; Voltage Vds Typ:400V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4.5V; Voltage Vgs th Min:3V
Технические параметры
| Корпус | to220ab | |
| кол-во в упаковке | 50 | |
| Brand | STMicroelectronics | |
| Channel Mode | Enhancement | |
| Configuration | Single | |
| Factory Pack Quantity | 2000 | |
| Fall Time | 18 ns | |
| Forward Transconductance - Min | 5.8 S | |
| Height | 9.15 mm | |
| Id - Continuous Drain Current | 9 A | |
| Length | 10.4 mm | |
| Manufacturer | STMicroelectronics | |
| Maximum Operating Temperature | +150 C | |
| Minimum Operating Temperature | -55 C | |
| Mounting Style | Through Hole | |
| Number of Channels | 1 Channel | |
| Package / Case | TO-220-3 | |
| Packaging | Tube | |
| Pd - Power Dissipation | 110 W | |
| Product Category | MOSFET | |
| Rds On - Drain-Source Resistance | 550 mOhms | |
| Rise Time | 20 ns | |
| RoHS | Details | |
| Series | N-channel MDmesh | |
| Technology | Si | |
| Transistor Polarity | N-Channel | |
| Transistor Type | 1 N-Channel | |
| Type | MOSFET | |
| Typical Turn-Off Delay Time | 40 ns | |
| Typical Turn-On Delay Time | 20 ns | |
| Unit Weight | 0.050717 oz | |
| Vds - Drain-Source Breakdown Voltage | 400 V | |
| Vgs - Gate-Source Voltage | 30 V | |
| Width | 4.6 mm | |
| Automotive | No | |
| Channel Type | N | |
| ECCN (US) | EAR99 | |
| EU RoHS | Compliant with Exemption | |
| Lead Shape | Through Hole | |
| Maximum Continuous Drain Current (A) | 9 | |
| Maximum Drain Source Resistance (mOhm) | 550@10V | |
| Maximum Drain Source Voltage (V) | 400 | |
| Maximum Gate Source Voltage (V) | ±30 | |
| Maximum Operating Temperature (°C) | 150 | |
| Maximum Power Dissipation (mW) | 110000 | |
| Minimum Operating Temperature (°C) | -55 | |
| Mounting | Through Hole | |
| Number of Elements per Chip | 1 | |
| Part Status | Active | |
| PCB changed | 3 | |
| Pin Count | 3 | |
| PPAP | No | |
| Process Technology | SuperMESH | |
| Standard Package Name | TO | |
| Supplier Package | TO-220AB | |
| Tab | Tab | |
| Typical Fall Time (ns) | 18 | |
| Typical Gate Charge @ 10V (nC) | 32 | |
| Typical Gate Charge @ Vgs (nC) | 32@10V | |
| Typical Input Capacitance @ Vds (pF) | 930@25V | |
| Typical Rise Time (ns) | 20 | |
| Typical Turn-Off Delay Time (ns) | 40 | |
| Typical Turn-On Delay Time (ns) | 20 | |
| Вес, г | 2.59 | |
Техническая документация
...11NK40Z
pdf, 500 КБ
Datasheet
pdf, 772 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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