STN2NF10

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см. техническую документацию

39 шт. со склада г.Москва

88 руб.

Мин. кол-во для заказа 39 шт.

Добавить в корзину 39 шт. на сумму 3 432 руб.

Альтернативные предложения6

Номенклатурный номер: 8001789164

Транзисторы и сборки MOSFET

Описание Транзистор: N-MOSFET, STripFET™ II, полевой, 100В, 2,4А, 3,3Вт Характеристики

Корпус	sot223
кол-во в упаковке	4000
Brand	STMicroelectronics
Channel Mode	Enhancement
Configuration	Single Dual Drain
Factory Pack Quantity	4000
Fall Time	3 ns
Forward Transconductance - Min	2.5 S
Height	1.8 mm
Id - Continuous Drain Current	2 A
Length	6.5 mm
Manufacturer	STMicroelectronics
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	SOT-223-3
Packaging	Reel
Pd - Power Dissipation	3.3 W
Product Category	MOSFET
Rds On - Drain-Source Resistance	260 mOhms
Rise Time	10 ns
RoHS	Details
Series	N-channel STripFET
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Type	MOSFET
Typical Turn-Off Delay Time	20 ns
Typical Turn-On Delay Time	6 ns
Vds - Drain-Source Breakdown Voltage	100 V
Vgs - Gate-Source Voltage	20 V
Width	3.5 mm
Channel Type	N
Maximum Continuous Drain Current	2.4 A
Maximum Drain Source Resistance	260 mΩ
Maximum Drain Source Voltage	100 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Gate Threshold Voltage	4V
Maximum Power Dissipation	3.3 W
Minimum Gate Threshold Voltage	2V
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOT-223
Pin Count	3
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	10 nC @ 10 V
Вес, г	0.253