IRFB4228
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Номенклатурный номер: 8001939236
Страна происхождения: КИТАЙ
Бренд / Производитель: INFINEON TECHNOLOGIES AG.
Описание
MOSFET,N CH,150V,83A,TO220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:83A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.012ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:330W; Transistor Case Style:TO-220AB; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Current Id Max:83A; Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +175°C; Voltage Vgs Max:30V
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 83A(Tc) |
| Drain to Source Voltage (Vdss) | 150V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 107nC 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 4530pF 25V |
| Manufacturer | Infineon Technologies |
| Mounting Type | Through Hole |
| Operating Temperature | -40В C ~ 175В C(TJ) |
| Package / Case | TO-220-3 |
| Packaging | Tube |
| Part Status | Active |
| Power Dissipation (Max) | 330W(Tc) |
| Rds On (Max) @ Id, Vgs | 15 mOhm 33A, 10V |
| Series | HEXFETВ(r) |
| Standard Package | 50 |
| Supplier Device Package | TO-220AB |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±30V |
| Vgs(th) (Max) @ Id | 5V 250ВuA |
| Base Product Number | IRFB4228 -> |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Package | Tube |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | Through Hole |
| Maximum Continuous Drain Current (A) | 83 |
| Maximum Drain Source Resistance (MOhm) | 15 10V |
| Maximum Drain Source Voltage (V) | 150 |
| Maximum Gate Source Voltage (V) | ±30 |
| Maximum Operating Temperature (°C) | 175 |
| Maximum Power Dissipation (mW) | 330000 |
| Minimum Operating Temperature (°C) | -40 |
| Mounting | Through Hole |
| Number of Elements per Chip | 1 |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | No |
| Process Technology | HEXFET |
| Product Category | Power MOSFET |
| Standard Package Name | TO-220 |
| Supplier Package | TO-220AB |
| Tab | Tab |
| Typical Gate Charge @ 10V (nC) | 72 |
| Typical Gate Charge @ Vgs (nC) | 72 10V |
| Typical Input Capacitance @ Vds (pF) | 4530 25V |
| Вес, г | 3.01 |
Техническая документация
Datasheet
pdf, 304 КБ
irfb4228pbf
pdf, 292 КБ
