AUIRF4905S
810 руб.
от 2 шт. —
680 руб.
от 3 шт. —
629 руб.
Добавить в корзину 1 шт.
на сумму 810 руб.
Описание
Электроэлемент
MOSFET, AECQ101. P CH, 55V, 42A, TO263AB; Transistor Polarity:P Channel; Continuous Drain Current Id:-42A; Drain Source Voltage Vds:-55V; On Resistance Rds(on):0.02ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power Dissipation Pd:170W; Transistor Case Style:TO-263AB; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:HEXFET Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
Технические параметры
| AEC Qualified Number | AEC-Q101 |
| Automotive | Yes |
| Channel Mode | Enhancement |
| Channel Type | P |
| Maximum Continuous Drain Current - (A) | 70 |
| Maximum Drain Source Resistance - (mOhm) | 20@10V |
| Maximum Drain Source Voltage - (V) | 55 |
| Maximum Gate Source Voltage - (V) | ??20 |
| Maximum Gate Threshold Voltage - (V) | 4 |
| Maximum Power Dissipation - (mW) | 170000 |
| Military | No |
| Number of Elements per Chip | 1 |
| Operating Temperature - (??C) | -55~150 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Process Technology | HEXFET |
| Standard Package Name | TO-263 |
| Supplier Package | D2PAK |
| Typical Gate Charge @ 10V - (nC) | 120 |
| Typical Gate Charge @ Vgs - (nC) | 120@10V |
| Typical Input Capacitance @ Vds - (pF) | 3500@25V |
| Вес, г | 1.5 |
Техническая документация
Datasheet AUIRF4905STRL
pdf, 615 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
