BSS123
1505 шт. со склада г.Москва, срок 6-7 дней
91 руб.
Мин. кол-во для заказа 2 шт.
от 5 шт. —
39 руб.
от 10 шт. —
21 руб.
от 100 шт. —
7.03 руб.
Добавить в корзину 2 шт.
на сумму 182 руб.
Номенклатурный номер: 8001988986
Бренд: Нет торговой марки
Описание
Электроэлемент
MOSFET, N CHANNEL, 100V, 170mA, SOT-23, Transistor Polarity:N Channel, Continuous Drain Current Id:170mA, Drain Source Voltage Vds:100V, On Resistance Rds(on):6ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.4V , RoHS Compliant: Yes
Технические параметры
| Brand | Diodes Incorporated |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 3000 |
| Fall Time | 8 ns |
| Forward Transconductance - Min | 0.08 S |
| Height | 1 mm |
| Id - Continuous Drain Current | 170 mA |
| Length | 2.9 mm |
| Manufacturer | Diodes Incorporated |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | SOT-23-3 |
| Packaging | Cut Tape |
| Pd - Power Dissipation | 300 mW |
| Product | MOSFET Small Signal |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 6 Ohms |
| Rise Time | 8 ns |
| RoHS | Details |
| Series | BSS123 |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Type | Enhancement Mode Field Effect Transistor |
| Typical Turn-Off Delay Time | 13 ns |
| Typical Turn-On Delay Time | 8 ns |
| Unit Weight | 0.000282 oz |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Vgs - Gate-Source Voltage | 20 V |
| Width | 1.3 mm |
| Вес, г | 0.04 |
Техническая документация
Datasheet BSS123Q-7
pdf, 500 КБ
Сроки доставки
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