ZVN3310A, MOSFET N-Chnl 100V
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Power MOSFETsDiodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.
Технические параметры
| Brand: | Diodes Incorporated |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 4000 |
| Fall Time: | 7 ns |
| Forward Transconductance - Min: | 100 mS |
| Id - Continuous Drain Current: | 500 mA |
| Manufacturer: | Diodes Incorporated |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-92-3 |
| Packaging: | Bulk |
| Pd - Power Dissipation: | 625 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | MOSFET Small Signal |
| Rds On - Drain-Source Resistance: | 10 Ohms |
| Rise Time: | 7 ns |
| Series: | ZVN3310 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | FET |
| Typical Turn-Off Delay Time: | 6 ns |
| Typical Turn-On Delay Time: | 5 ns |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 800 mV |
| Brand | Diodes Incorporated |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 4000 |
| Fall Time | 7 ns |
| Height | 4.01 mm |
| Id - Continuous Drain Current | 200 mA |
| Length | 4.77 mm |
| Manufacturer | Diodes Incorporated |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package / Case | TO-92-3 |
| Packaging | Cut Tape |
| Pd - Power Dissipation | 625 mW |
| Product | MOSFET Small Signal |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 10 Ohms |
| Rise Time | 7 ns |
| RoHS | Details |
| Series | ZVN3310 |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Type | FET |
| Typical Turn-Off Delay Time | 6 ns |
| Typical Turn-On Delay Time | 5 ns |
| Unit Weight | 0.016 oz |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Vgs - Gate-Source Voltage | 20 V |
| Width | 2.41 mm |
| Channel Type | N |
| Maximum Continuous Drain Current | 200 mA |
| Maximum Drain Source Resistance | 10 Ω |
| Maximum Drain Source Voltage | 100 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Gate Threshold Voltage | 2.4V |
| Maximum Power Dissipation | 625 mW |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | TO-92 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Вес, г | 0.45 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
