MMBF170

93 руб.
Мин. кол-во для заказа 2 шт.
от 5 шт.40 руб.
от 10 шт.23 руб.
от 70 шт.8.93 руб.
Добавить в корзину 2 шт. на сумму 186 руб.
Номенклатурный номер: 8001997597
Бренд / Производитель: DIODES INC.

Описание

Электроэлемент
MOSFET, N CH, 60V, 0.5A, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:500mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.1V; Power Dissipation Pd:300mW; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019); Current Id Max:800mA; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:Enhancement; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

Технические параметры

Brand Diodes Incorporated
Channel Mode Enhancement
Configuration Single
Factory Pack Quantity 3000
Forward Transconductance - Min 0.08 S
Height 1 mm
Id - Continuous Drain Current 500 mA
Length 2.9 mm
Manufacturer Diodes Incorporated
Maximum Operating Temperature +150 C
Minimum Operating Temperature -55 C
Mounting Style SMD/SMT
Number of Channels 1 Channel
Package / Case SOT-23-3
Packaging Reel
Pd - Power Dissipation 300 mW
Product MOSFET Small Signal
Product Category MOSFET
Rds On - Drain-Source Resistance 5 Ohms
RoHS Details
Series MMBF170
Technology Si
Transistor Polarity N-Channel
Transistor Type 1 N-Channel
Type Enhancement Mode Field Effect Transistor
Typical Turn-Off Delay Time 10 ns
Typical Turn-On Delay Time 10 ns
Vds - Drain-Source Breakdown Voltage 70 V
Vgs - Gate-Source Voltage 20 V
Width 1.3 mm
Вес, г 0.1

Техническая документация

Datasheet MMBF170-7-F
pdf, 194 КБ