IRLHS6242
92 шт. со склада г.Москва, срок 8-9 дней
140 руб.
Мин. кол-во для заказа 2 шт.
от 5 шт. —
81 руб.
от 10 шт. —
64 руб.
от 92 шт. —
46.50 руб.
Добавить в корзину 2 шт.
на сумму 280 руб.
Номенклатурный номер: 8002013164
Бренд: Нет торговой марки
Описание
Электроэлемент
MOSFET, N-CH, 20V, 22A, PQFN-8; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.0094ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:800mV; P
Технические параметры
| Brand | Infineon Technologies |
| Channel Mode | Enhancement |
| Configuration | Single Quint Drain Dual Source |
| Factory Pack Quantity | 4000 |
| Fall Time | 13 ns |
| Forward Transconductance - Min | 36 S |
| Height | 0.9 mm |
| Id - Continuous Drain Current | 22 A |
| Length | 2 mm |
| Manufacturer | Infineon |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | PQFN-6 |
| Packaging | Cut Tape |
| Part # Aliases | SP001573008 |
| Pd - Power Dissipation | 9.6 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 14 nC |
| Rds On - Drain-Source Resistance | 11.7 mOhms |
| Rise Time | 15 ns |
| RoHS | Details |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Type | HEXFET Power MOSFET |
| Typical Turn-Off Delay Time | 19 ns |
| Typical Turn-On Delay Time | 5.8 ns |
| Unit Weight | 0.000368 oz |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Vgs - Gate-Source Voltage | 12 V |
| Vgs th - Gate-Source Threshold Voltage | 0.5 V to 1.1 V |
| Width | 2 mm |
| Вес, г | 0.06 |
Техническая документация
Datasheet
pdf, 246 КБ
Сроки доставки
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