IRFL024Z
200 руб.
Мин. кол-во для заказа 2 шт.
от 5 шт. —
140 руб.
от 10 шт. —
114 руб.
от 54 шт. —
95.13 руб.
Добавить в корзину 2 шт.
на сумму 400 руб.
Описание
Электроэлемент
MOSFET, N-CH, 55V, 5.1A, SOT-223, Transistor Polarity:N Channel, Continuous Drain Current Id:5.1A, Drain Source Voltage Vds:55V, On Resistance Rds(on):0.0462ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power , RoHS Compliant: Yes
Технические параметры
| Brand | Infineon Technologies |
| Configuration | Single |
| Factory Pack Quantity | 2500 |
| Fall Time | 23 ns |
| Forward Transconductance - Min | 6.2 S |
| Height | 1.6 mm |
| Id - Continuous Drain Current | 5.1 A |
| Length | 6.5 mm |
| Manufacturer | Infineon |
| Maximum Operating Temperature | +150 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | SOT-223-4 |
| Packaging | Reel |
| Pd - Power Dissipation | 2.8 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 14 nC |
| Rds On - Drain-Source Resistance | 57.5 mOhms |
| Rise Time | 21 ns |
| RoHS | Details |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Vds - Drain-Source Breakdown Voltage | 55 V |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Width | 3.5 mm |
| Вес, г | 0.21 |
Техническая документация
Документация
pdf, 273 КБ
