STD13NM60N

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1 шт. со склада г.Москва, срок 8-11 дней

600 руб.

Добавить в корзину 1 шт. на сумму 600 руб.

Альтернативные предложения2

Номенклатурный номер: 8002021880

Электроэлемент

Описание Транзистор: N-MOSFET, полевой, 600В, 6,93А, 90Вт, DPAK Характеристики

Brand	STMicroelectronics
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	2500
Fall Time	10 ns
Id - Continuous Drain Current	11 A
Manufacturer	STMicroelectronics
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	TO-252-3
Packaging	MouseReel
Pd - Power Dissipation	90 W
Product Category	MOSFET
Rds On - Drain-Source Resistance	360 mOhms
Rise Time	8 ns
RoHS	Details
Series	N-channel MDmesh
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	30 ns
Typical Turn-On Delay Time	3 ns
Unit Weight	0.139332 oz
Vds - Drain-Source Breakdown Voltage	600 V
Vgs - Gate-Source Voltage	25 V
Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	2500
Fall Time:	10 ns
Id - Continuous Drain Current:	11 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	TO-252-3
Pd - Power Dissipation:	90 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	27 nC
Rds On - Drain-Source Resistance:	360 mOhms
Rise Time:	8 ns
Series:	STD13NM60N
Subcategory:	MOSFETs
Technology:	Si
Tradename:	MDmesh
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	30 ns
Typical Turn-On Delay Time:	3 ns
Vds - Drain-Source Breakdown Voltage:	600 V
Vgs - Gate-Source Voltage:	-25 V, +25 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Вес, г	0.449