IRF1405S
27 шт. со склада г.Москва, срок 8-9 дней
680 руб.
от 2 шт. —
570 руб.
от 5 шт. —
488 руб.
от 10 шт. —
453.75 руб.
Добавить в корзину 1 шт.
на сумму 680 руб.
Номенклатурный номер: 8002024864
Бренд: Нет торговой марки
Описание
Электроэлемент
MOSFET, N-CH, 55V, 131A, TO-263AB, Transistor Polarity:N Channel, Continuous Drain Current Id:131A, Drain Source Voltage Vds:55V, On Resistance Rds(on):0.0046ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power , RoHS Compliant: Yes
Технические параметры
| Brand | Infineon Technologies |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 800 |
| Fall Time | 110 ns |
| Height | 2.3 mm |
| Id - Continuous Drain Current | 131 A |
| Length | 6.5 mm |
| Manufacturer | Infineon |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TO-252-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 200 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 170 nC |
| Rds On - Drain-Source Resistance | 5.3 mOhms |
| Rise Time | 190 ns |
| RoHS | Details |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Type | Automotive Mosfet |
| Typical Turn-Off Delay Time | 130 ns |
| Typical Turn-On Delay Time | 13 ns |
| Unit Weight | 0.139332 oz |
| Vds - Drain-Source Breakdown Voltage | 55 V |
| Vgs - Gate-Source Voltage | 20 V |
| Width | 6.22 mm |
| Вес, г | 1.701 |
Техническая документация
Datasheet
pdf, 317 КБ
Сроки доставки
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