410 руб.
от 2 шт.330 руб.
от 5 шт.277 руб.
от 10 шт.261 руб.
Добавить в корзину 1 шт. на сумму 410 руб.
Номенклатурный номер: 8002025581
Страна происхождения: КИТАЙ
Бренд / Производитель: INFINEON TECHNOLOGIES AG.


MOSFET, P-CH, -55V, -12A, 175DEG C, 45W; Transistor Polarity:P Channel; Continuous Drain Current Id:-12A; Drain Source Voltage Vds:-55V; On Resistance Rds(on):0.175ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power Dissipation Pd:45W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:HEXFET Series; Automotive Qualification Standard:-; SVHC:No SVHC (15-Jan-2019)

Технические параметры

Current - Continuous Drain (Id) @ 25В°C 12A(Tc)
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On, Min Rds On) 10V
FET Feature -
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 19nC 10V
Input Capacitance (Ciss) (Max) @ Vds 350pF 25V
Manufacturer Infineon Technologies
Mounting Type Surface Mount
Operating Temperature -55В C ~ 175В C(TJ)
Package / Case TO-263-3, DВІPak(2 Leads+Tab), TO-263AB
Packaging Cut Tape(CT)
Part Status Active
Power Dissipation (Max) 3.8W(Ta), 45W(Tc)
Rds On (Max) @ Id, Vgs 175 mOhm 7.2A, 10V
Series HEXFETВ(r)
Supplier Device Package D2PAK
Technology MOSFET(Metal Oxide)
Vgs (Max) В±20V
Vgs(th) (Max) @ Id 4V 250ВuA
Вес, г 2.18