IRF9Z24NS
410 руб.
от 2 шт. —
330 руб.
от 5 шт. —
277 руб.
от 10 шт. —
261 руб.
Добавить в корзину 1 шт.
на сумму 410 руб.
Номенклатурный номер: 8002025581
Страна происхождения: КИТАЙ
Бренд / Производитель: INFINEON TECHNOLOGIES AG.
Описание
MOSFET, P-CH, -55V, -12A, 175DEG C, 45W; Transistor Polarity:P Channel; Continuous Drain Current Id:-12A; Drain Source Voltage Vds:-55V; On Resistance Rds(on):0.175ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power Dissipation Pd:45W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:HEXFET Series; Automotive Qualification Standard:-; SVHC:No SVHC (15-Jan-2019)
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 12A(Tc) |
| Drain to Source Voltage (Vdss) | 55V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 19nC 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 350pF 25V |
| Manufacturer | Infineon Technologies |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В C ~ 175В C(TJ) |
| Package / Case | TO-263-3, DВІPak(2 Leads+Tab), TO-263AB |
| Packaging | Cut Tape(CT) |
| Part Status | Active |
| Power Dissipation (Max) | 3.8W(Ta), 45W(Tc) |
| Rds On (Max) @ Id, Vgs | 175 mOhm 7.2A, 10V |
| Series | HEXFETВ(r) |
| Supplier Device Package | D2PAK |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 4V 250ВuA |
| Вес, г | 2.18 |
