IRFPC60LC

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22 шт. со склада г.Москва, срок 8-9 дней

1 350 руб.

от 2 шт. — 1 220 руб.

от 5 шт. — 1 130 руб.

от 10 шт. — 1 072.50 руб.

Добавить в корзину 1 шт. на сумму 1 350 руб.

Номенклатурный номер: 8002025939

Бренд: Нет торговой марки

Электроэлемент

Single N-Channel 600 V 0.4 Ohms Flange Mount Power Mosfet - TO-247

Current - Continuous Drain (Id) @ 25В°C	16A(Tc)
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	120nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	3500pF @ 25V
Manufacturer	Vishay Siliconix
Mounting Type	Through Hole
Operating Temperature	-55В°C ~ 150В°C(TJ)
Package / Case	TO-247-3
Packaging	Tube
Part Status	Active
Power Dissipation (Max)	280W(Tc)
Rds On (Max) @ Id, Vgs	400mOhm @ 9.6A, 10V
Series	-
Supplier Device Package	TO-247-3
Technology	MOSFET(Metal Oxide)
Vgs (Max)	В±30V
Vgs(th) (Max) @ Id	4V @ 250ВµA
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	16 A
Maximum Drain Source Resistance	400 mΩ
Maximum Drain Source Voltage	600 V
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	280 W
Minimum Gate Threshold Voltage	2V
Minimum Operating Temperature	-55 °C
Number of Elements per Chip	1
Package Type	TO-247AC
Pin Count	3
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	120 nC @ 10 V
Width	5.31mm
Вес, г	8.5