MMBT3904-G, Bipolar Transistors - BJT VCEO=40V IC=200mA
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Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
MMBTx General Purpose Transistors Comchip Technology MMBTx General Purpose Transistors are NPN and PNP bipolar devices designed for high gain, low-noise, amplifier, and switching applications. These devices offer high energy efficiency due to low heat generation and feature low collector-emitter saturation voltage. The Comchip Technology MMBTx General Purpose Transistors are offered in an industry-standard, low-profile SOT-23 package, well-suited for pick-and-place assembly.
Технические параметры
| Brand: | Comchip Technology |
| Collector- Base Voltage VCBO: | 60 V |
| Collector- Emitter Voltage VCEO Max: | 40 V |
| Collector-Emitter Saturation Voltage: | 300 mV |
| Configuration: | Single |
| Continuous Collector Current: | 200 mA |
| DC Collector/Base Gain hFE Min: | 100 |
| DC Current Gain hFE Max: | 400 |
| Emitter- Base Voltage VEBO: | 6 V |
| Factory Pack Quantity: | 3000 |
| Gain Bandwidth Product fT: | 300 MHz |
| Manufacturer: | Comchip Technology |
| Maximum DC Collector Current: | 200 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Package/Case: | SOT-23-3 |
| Pd - Power Dissipation: | 200 mW |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | NPN |
| Вес, г | 1 |
Техническая документация
Datasheet
pdf, 120 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные (BJTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
