FGH40N60SMDF, Биполярный транзистор IGBT, 600 В, 80 А, 349 Вт

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900 руб.

от 4 шт. — 800 руб.

от 7 шт. — 751 руб.

от 13 шт. — 708 руб.

Добавить в корзину 1 шт. на сумму 900 руб.

Номенклатурный номер: 8004507521

Артикул: FGH40N60SMDF

Транзисторы / IGBT (БТИЗ) транзисторы / Одиночные IGBT транзисторы

Биполярный транзистор IGBT, 600 В, 80 А, 349 Вт

Корпус	TO-247-3
Channel Type	N
Maximum Collector Emitter Voltage	600 V
Maximum Continuous Collector Current	80 A
Maximum Gate Emitter Voltage	±20V
Maximum Operating Temperature	+175 °C
Maximum Power Dissipation	349 W
Minimum Operating Temperature	-55 °C
Mounting Type	Through Hole
Package Type	TO-247AB
Pin Count	3
Transistor Configuration	Single
Base Part Number	FGH40N60
Current - Collector (Ic) (Max)	80A
Current - Collector Pulsed (Icm)	120A
Gate Charge	119nC
IGBT Type	Field Stop
Input Type	Standard
Manufacturer	ON Semiconductor
Operating Temperature	-55В°C ~ 175В°C(TJ)
Package / Case	TO-247-3
Packaging	Tube
Part Status	Active
Power - Max	349W
Reverse Recovery Time (trr)	90ns
Series	-
Supplier Device Package	TO-247-3
Switching Energy	1.3mJ(on), 260ВµJ(off)
Td (on/off) @ 25В°C	12ns/92ns
Test Condition	400V, 40A, 6Ohm, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 40A
Voltage - Collector Emitter Breakdown (Max)	600V
Brand:	onsemi/Fairchild
Collector- Emitter Voltage VCEO Max:	600 V
Collector-Emitter Saturation Voltage:	1.9 V
Configuration:	Single
Continuous Collector Current at 25 C:	80 A
Factory Pack Quantity: Factory Pack Quantity:	30
Gate-Emitter Leakage Current:	400 nA
Manufacturer:	onsemi
Maximum Gate Emitter Voltage:	-20 V, 20 V
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Package / Case:	TO-247
Packaging:	Tube
Pd - Power Dissipation:	349 W
Product Category:	IGBT Transistors
Product Type:	IGBT Transistors
Series:	FGH40N60SMDF
Subcategory:	IGBTs
Technology:	Si
Вес, г	5.42