FDP20N50
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см. техническую документацию
см. техническую документацию
4 шт. со склада г.Москва, срок 8-11 дней
1 310 руб.
от 2 шт. —
1 180 руб.
от 4 шт. —
1 100 руб.
Добавить в корзину 1 шт.
на сумму 1 310 руб.
Номенклатурный номер: 8002983427
Бренд: Нет торговой марки
Описание
Электроэлемент
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.23ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:250W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018); Current Id Max:20A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:80A; Repetitive Avalanche Energy Max:25mJ; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
Технические параметры
| Brand | ON Semiconductor/Fairchild |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 50 |
| Fall Time | 105 ns |
| Forward Transconductance - Min | 24.6 S |
| Height | 16.3 mm |
| Id - Continuous Drain Current | 20 A |
| Length | 10.67 mm |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package / Case | TO-220-3 |
| Packaging | Tube |
| Pd - Power Dissipation | 250 W |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 230 mOhms |
| Rise Time | 375 ns |
| RoHS | Details |
| Series | FDP20N50 |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Type | MOSFET |
| Typical Turn-Off Delay Time | 100 ns |
| Typical Turn-On Delay Time | 95 ns |
| Unit Weight | 0.063493 oz |
| Vds - Drain-Source Breakdown Voltage | 500 V |
| Vgs - Gate-Source Voltage | 30 V |
| Width | 4.7 mm |
| Automotive | No |
| Channel Type | N |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | Through Hole |
| Maximum Continuous Drain Current (A) | 20 |
| Maximum Drain Source Resistance (mOhm) | 230@10V |
| Maximum Drain Source Voltage (V) | 500 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±30 |
| Maximum Gate Threshold Voltage (V) | 5 |
| Maximum IDSS (uA) | 1 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 250000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Through Hole |
| Number of Elements per Chip | 1 |
| Part Status | Obsolete |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | No |
| Process Technology | UniFET |
| Standard Package Name | TO |
| Supplier Package | TO-220 |
| Tab | Tab |
| Typical Fall Time (ns) | 105 |
| Typical Gate Charge @ 10V (nC) | 45.6 |
| Typical Gate Charge @ Vgs (nC) | 45.6@10V |
| Typical Input Capacitance @ Vds (pF) | 2400@25V |
| Typical Rise Time (ns) | 375 |
| Typical Turn-Off Delay Time (ns) | 100 |
| Typical Turn-On Delay Time (ns) | 95 |
| Case | TO220AB |
| Drain current | 12.9A |
| Drain-source voltage | 500V |
| Gate charge | 65nC |
| Gate-source voltage | ±30V |
| Kind of channel | enhanced |
| Kind of package | tube |
| On-state resistance | 0.26Ω |
| Polarisation | unipolar |
| Power dissipation | 250W |
| Type of transistor | N-MOSFET |
| Вес, г | 2.7 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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