2N2222 PBFREE, Bipolar Transistors - BJT NPN Silicon
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см. техническую документацию
см. техническую документацию
2169 шт., срок 7-9 недель
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Альтернативные предложения1
Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Биполярный (BJT) транзистор NPN 30V 800mA 250MHz 500mW Through Hole TO-18
Технические параметры
| Brand: | Central Semiconductor |
| Collector- Base Voltage VCBO: | 60 V |
| Collector- Emitter Voltage VCEO Max: | 30 V |
| Collector-Emitter Saturation Voltage: | 1.6 V |
| Configuration: | Single |
| Continuous Collector Current: | 800 mA |
| DC Collector/Base Gain hfe Min: | 100 |
| DC Current Gain hFE Max: | 300 |
| Emitter- Base Voltage VEBO: | 5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2000 |
| Gain Bandwidth Product fT: | 250 MHz |
| Manufacturer: | Central Semiconductor |
| Maximum DC Collector Current: | 800 mA |
| Maximum Operating Temperature: | +200 C |
| Minimum Operating Temperature: | -65 C |
| Mounting Style: | Through Hole |
| Package / Case: | TO-18-3 |
| Packaging: | Bulk |
| Pd - Power Dissipation: | 500 mW |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Subcategory: | Transistors |
| Transistor Polarity: | NPN |
| Current - Collector (Ic) (Max) | 800mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| ECCN | EAR99 |
| Frequency - Transition | 250MHz |
| HTSUS | 8541.21.0075 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Through Hole |
| Operating Temperature | -65В°C ~ 200В°C (TJ) |
| Package | Bulk |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Power - Max | 500mW |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Supplier Device Package | TO-18 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 30V |
| Automotive | No |
| Configuration | Single |
| Diameter | 5.84(Max) |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | Through Hole |
| Material | Si |
| Maximum Base Emitter Saturation Voltage (V) | 1.3@15mA@150mA|2.6@50mA@500mA |
| Maximum Collector Base Voltage (V) | 60 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.4@15mA@150mA|1.6@50mA@500mA |
| Maximum Collector-Emitter Voltage (V) | 30 |
| Maximum DC Collector Current (A) | 0.8 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Operating Temperature (°C) | 200 |
| Maximum Power Dissipation (mW) | 500 |
| Maximum Transition Frequency (MHz) | 250(Min) |
| Minimum Operating Temperature (°C) | -65 |
| Mounting | Through Hole |
| Number of Elements per Chip | 1 |
| Part Status | Active |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | No |
| Product Category | Bipolar Small Signal |
| Standard Package Name | TO |
| Supplier Package | TO-18 |
| Type | NPN |
| Вес, г | 1 |
Техническая документация
Datasheet
pdf, 608 КБ
Datasheet 2N2222 PBFREE
pdf, 604 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные (BJTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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