STP80NF10FP, Транзистор N-МОП, полевой, 100В 80A TO-220FP

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270 шт., срок 7 недель

730 руб.

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Номенклатурный номер: 8002549421

Артикул: STP80NF10FP

Описание Транзистор N-МОП, полевой, 100В 80A TO-220FP Характеристики

Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	1000
Fall Time:	60 ns
Id - Continuous Drain Current:	80 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package / Case:	TO-220-3
Packaging:	Tube
Pd - Power Dissipation:	300 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	189 nC
Rds On - Drain-Source Resistance:	15 mOhms
Rise Time:	80 ns
Series:	STP80NF10FP
Subcategory:	MOSFETs
Technology:	Si
Tradename:	STripFET
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	116 ns
Typical Turn-On Delay Time:	26 ns
Vds - Drain-Source Breakdown Voltage:	100 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	80 A
Maximum Drain Source Resistance	15 mΩ
Maximum Drain Source Voltage	100 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Gate Threshold Voltage	4V
Maximum Operating Temperature	+175 °C
Maximum Power Dissipation	45 W
Minimum Gate Threshold Voltage	2V
Minimum Operating Temperature	-55 °C
Mounting Type	Through Hole
Number of Elements per Chip	1
Package Type	TO-220FP
Pin Count	3
Series	STripFET II
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	135 nC @ 10 V
Width	4.6mm
Вес, г	3.5