FDS6930B, Транзистор: N-MOSFET x2, полевой, 20В, 5,5А, 2Вт, SO8
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Описание
Semiconductors\Transistors\Unipolar transistors\Multi channel transistors
Описание Транзистор: N-MOSFET x2, полевой, 20В, 5,5А, 2Вт, SO8 Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Case | SO8 |
| Drain current | 5.5A |
| Drain-source voltage | 20V |
| Gate charge | 3.8nC |
| Gate-source voltage | ±20V |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Manufacturer | ONSEMI |
| Mounting | SMD |
| On-state resistance | 62mΩ |
| Polarisation | unipolar |
| Power dissipation | 2W |
| Technology | PowerTrench® |
| Type of transistor | N-MOSFET x2 |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 2 ns |
| Forward Transconductance - Min: | 19 S |
| Id - Continuous Drain Current: | 5.5 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package / Case: | SOIC-8 |
| Part # Aliases: | FDS6930B_NL |
| Pd - Power Dissipation: | 2 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 3.8 nC |
| Rds On - Drain-Source Resistance: | 38 mOhms |
| Rise Time: | 6 ns |
| Series: | FDS6930B |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | PowerTrench |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 2 N-Channel |
| Type: | MOSFET |
| Typical Turn-Off Delay Time: | 16 ns |
| Typical Turn-On Delay Time: | 6 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual Dual Drain |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 5.5 |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 5.5 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Maximum Drain Source Resistance (mOhm) | 38@10V |
| Maximum Drain Source Voltage (V) | 30 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 3 |
| Maximum IDSS (uA) | 1 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 135 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Power Dissipation (mW) | 2000 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 2 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 20 |
| Minimum Gate Threshold Voltage (V) | 1 |
| Minimum Operating Temperature (°C) | -55 |
| Number of Elements per Chip | 2 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 8 |
| Pin Count | 8 |
| PPAP | No |
| Process Technology | PowerTrench |
| Product Category | Power MOSFET |
| Standard Package Name | SO |
| Supplier Package | SOIC |
| Typical Diode Forward Voltage (V) | 0.8 |
| Typical Fall Time (ns) | 2 |
| Typical Gate Charge @ Vgs (nC) | 2.7@5V |
| Typical Gate Plateau Voltage (V) | 3 |
| Typical Gate Threshold Voltage (V) | 1.9 |
| Typical Gate to Drain Charge (nC) | 0.7 |
| Typical Gate to Source Charge (nC) | 1 |
| Typical Input Capacitance @ Vds (pF) | 310@15V |
| Typical Output Capacitance (pF) | 90 |
| Typical Reverse Recovery Charge (nC) | 6 |
| Typical Reverse Recovery Time (ns) | 16 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 40@15V |
| Typical Rise Time (ns) | 6 |
| Typical Turn-Off Delay Time (ns) | 16 |
| Typical Turn-On Delay Time (ns) | 6 |
| Maximum Continuous Drain Current | 5.5 A |
| Maximum Drain Source Resistance | 38 mΩ |
| Maximum Drain Source Voltage | 30 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 2 W |
| Minimum Gate Threshold Voltage | 1V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Package Type | SOIC |
| Series | PowerTrench |
| Transistor Configuration | Isolated |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 2.7 nC @ 5 V |
| Width | 4mm |
| Вес, г | 0.187 |
Техническая документация
Дополнительная информация
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