FDS6930B, Транзистор: N-MOSFET x2, полевой, 20В, 5,5А, 2Вт, SO8
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Описание
Semiconductors\Transistors\Unipolar transistors\Multi channel transistors
Описание Транзистор: N-MOSFET x2, полевой, 20В, 5,5А, 2Вт, SO8 Характеристики Категория | Транзистор |
Тип | полевой |
Вид | MOSFET |
Технические параметры
Case | SO8 |
Drain current | 5.5A |
Drain-source voltage | 20V |
Gate charge | 3.8nC |
Gate-source voltage | ±20V |
Kind of channel | enhanced |
Kind of package | reel, tape |
Manufacturer | ONSEMI |
Mounting | SMD |
On-state resistance | 62mΩ |
Polarisation | unipolar |
Power dissipation | 2W |
Technology | PowerTrench® |
Type of transistor | N-MOSFET x2 |
Brand: | onsemi/Fairchild |
Channel Mode: | Enhancement |
Configuration: | Dual |
Factory Pack Quantity: Factory Pack Quantity: | 2500 |
Fall Time: | 2 ns |
Forward Transconductance - Min: | 19 S |
Id - Continuous Drain Current: | 5.5 A |
Manufacturer: | onsemi |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 2 Channel |
Package / Case: | SOIC-8 |
Part # Aliases: | FDS6930B_NL |
Pd - Power Dissipation: | 2 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 3.8 nC |
Rds On - Drain-Source Resistance: | 38 mOhms |
Rise Time: | 6 ns |
Series: | FDS6930B |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | PowerTrench |
Transistor Polarity: | N-Channel |
Transistor Type: | 2 N-Channel |
Type: | MOSFET |
Typical Turn-Off Delay Time: | 16 ns |
Typical Turn-On Delay Time: | 6 ns |
Vds - Drain-Source Breakdown Voltage: | 30 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 1 V |
Automotive | No |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Dual Dual Drain |
ECCN (US) | EAR99 |
EU RoHS | Compliant |
Lead Shape | Gull-wing |
Maximum Continuous Drain Current (A) | 5.5 |
Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 5.5 |
Maximum Diode Forward Voltage (V) | 1.2 |
Maximum Drain Source Resistance (mOhm) | 38@10V |
Maximum Drain Source Voltage (V) | 30 |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Gate Threshold Voltage (V) | 3 |
Maximum IDSS (uA) | 1 |
Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 135 |
Maximum Operating Temperature (°C) | 150 |
Maximum Positive Gate Source Voltage (V) | 20 |
Maximum Power Dissipation (mW) | 2000 |
Maximum Power Dissipation on PCB @ TC=25°C (W) | 2 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 20 |
Minimum Gate Threshold Voltage (V) | 1 |
Minimum Operating Temperature (°C) | -55 |
Number of Elements per Chip | 2 |
Operating Junction Temperature (°C) | -55 to 150 |
Packaging | Tape and Reel |
Part Status | Active |
PCB changed | 8 |
Pin Count | 8 |
PPAP | No |
Process Technology | PowerTrench |
Product Category | Power MOSFET |
Standard Package Name | SO |
Supplier Package | SOIC |
Typical Diode Forward Voltage (V) | 0.8 |
Typical Fall Time (ns) | 2 |
Typical Gate Charge @ Vgs (nC) | 2.7@5V |
Typical Gate Plateau Voltage (V) | 3 |
Typical Gate Threshold Voltage (V) | 1.9 |
Typical Gate to Drain Charge (nC) | 0.7 |
Typical Gate to Source Charge (nC) | 1 |
Typical Input Capacitance @ Vds (pF) | 310@15V |
Typical Output Capacitance (pF) | 90 |
Typical Reverse Recovery Charge (nC) | 6 |
Typical Reverse Recovery Time (ns) | 16 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 40@15V |
Typical Rise Time (ns) | 6 |
Typical Turn-Off Delay Time (ns) | 16 |
Typical Turn-On Delay Time (ns) | 6 |
Maximum Continuous Drain Current | 5.5 A |
Maximum Drain Source Resistance | 38 mΩ |
Maximum Drain Source Voltage | 30 V |
Maximum Gate Source Voltage | -20 V, +20 V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 2 W |
Minimum Gate Threshold Voltage | 1V |
Minimum Operating Temperature | -55 °C |
Mounting Type | Surface Mount |
Package Type | SOIC |
Series | PowerTrench |
Transistor Configuration | Isolated |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 2.7 nC @ 5 V |
Width | 4mm |
Вес, г | 0.187 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов