PBSS4140U

110 руб.
Мин. кол-во для заказа 2 шт.
от 5 шт.60 руб.
от 10 шт.43 руб.
от 100 шт.26.46 руб.
Добавить в корзину 2 шт. на сумму 220 руб.
Номенклатурный номер: 8002973521
Бренд: NXP Semiconductor

Описание

Электроэлемент
TRANSISTOR, NPN, SOT-323; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:150MHz; Power Dissipation Pd:250mW; DC Collector Current:1A; DC Current Gain hFE:300hFE; Transistor Case Style:SOT-323; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):200mV; Continuous Collector Current Ic Max:1A; Current Ic Continuous a Max:1A; Current Ic hFE:500mA; Full Power Rating Temperature:25°C; Gain Bandwidth ft Typ:100MHz; Hfe Min:300; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:350mW; SMD Marking:41; Voltage Vcbo:40V

Технические параметры

Brand Nexperia
Collector- Base Voltage VCBO 40 V
Collector- Emitter Voltage VCEO Max 40 V
Configuration Single
DC Collector/Base Gain hfe Min 300 at 1 mA at 5 V, 300 at 500 mA at 5 V, 200 at 1 A at 5 V
DC Current Gain hFE Max 300 at 1 mA at 5 V
Emitter- Base Voltage VEBO 5 V
Factory Pack Quantity 10000
Gain Bandwidth Product fT 150 MHz
Height 1 mm
Length 2.2 mm
Manufacturer Nexperia
Maximum DC Collector Current 1 A
Maximum Operating Temperature +150 C
Minimum Operating Temperature -65 C
Mounting Style SMD/SMT
Package / Case UMT-3
Packaging Reel
Part # Aliases /T3 PBSS4140U
Pd - Power Dissipation 350 mW
Product Category Bipolar Transistors-BJT
RoHS Details
Transistor Polarity NPN
Width 1.35 mm
Вес, г 0.3095

Техническая документация

Datasheet PBSS4140U,115
pdf, 466 КБ