FDD4685, P-Channel MOSFET, 8.4 A, 40 V, 3-Pin DPAK FDD4685
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
170 руб.
Кратность заказа 2500 шт.
Добавить в корзину 2500 шт.
на сумму 425 000 руб.
Описание
Semiconductors\Discrete Semiconductors\MOSFETs
Описание Транзистор: P-MOSFET, полевой, -40В, -32А, 69Вт, TO252 Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | P |
| Maximum Continuous Drain Current | 8.4 A |
| Maximum Drain Source Resistance | 42 mΩ |
| Maximum Drain Source Voltage | 40 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 69 W |
| Minimum Gate Threshold Voltage | 1V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | DPAK(TO-252) |
| Pin Count | 3 |
| Series | PowerTrench |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 19 nC @ 5 V |
| Width | 6.22mm |
| Lead Finish | Matte Tin |
| Max Processing Temp | 260 |
| Mounting | Surface Mount |
| Operating Temperature | -55 to 150 °C |
| RDS-on | 27@10V mOhm |
| Typical Fall Time | 14 ns |
| Typical Rise Time | 15 ns |
| Typical Turn-Off Delay Time | 34 ns |
| Typical Turn-On Delay Time | 8 ns |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 14 ns |
| Id - Continuous Drain Current: | 32 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | DPAK-3 |
| Pd - Power Dissipation: | 69 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 27 nC |
| Rds On - Drain-Source Resistance: | 27 mOhms |
| Rise Time: | 15 ns |
| Series: | FDD4685 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | PowerTrench |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 34 ns |
| Typical Turn-On Delay Time: | 8 ns |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Continuous Drain Current (Id) | - |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | - |
| Drain Source Voltage (Vdss) | - |
| Gate Threshold Voltage (Vgs(th)@Id) | - |
| Input Capacitance (Ciss@Vds) | - |
| Power Dissipation (Pd) | - |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Total Gate Charge (Qg@Vgs) | - |
| Type | - |
| Вес, г | 1 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 373 КБ
Datasheet
pdf, 593 КБ
Datasheet
pdf, 592 КБ
Документация
pdf, 595 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
