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Номенклатурный номер: 8002985082
Производитель: ON Semiconductor


QFET® N-Channel MOSFET, over 31A, Fairchild Semiconductor
Fairchild Semiconductor's new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

Технические параметры

Maximum Operating Temperature +150 °C
Number of Elements per Chip 1
Length 10.67mm
Transistor Configuration Single
Brand ON Semiconductor
Maximum Continuous Drain Current 31 A
Package Type D2PAK (TO-263)
Maximum Power Dissipation 3.13 W
Series QFET
Mounting Type Surface Mount
Minimum Operating Temperature -55 °C
Width 9.65mm
Height 4.83mm
Minimum Gate Threshold Voltage 1V
Maximum Drain Source Resistance 75 mΩ
Maximum Drain Source Voltage 200 V
Pin Count 3
Typical Gate Charge @ Vgs 55 nC @ 5 V
Transistor Material Si
Channel Mode Enhancement
Channel Type N
Maximum Gate Source Voltage -20 V, +20 V
Base Product Number FQB3 ->
Current - Continuous Drain (Id) @ 25В°C 31A (Tc)
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 72nC @ 5V
HTSUS 8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds 3900pF @ 25V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Mounting Type Surface Mount
Operating Temperature -55В°C ~ 150В°C (TJ)
Package Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case TO-263-3, DВІPak (2 Leads + Tab), TO-263AB
Power Dissipation (Max) 3.13W (Ta), 180W (Tc)
Rds On (Max) @ Id, Vgs 75mOhm @ 15.5A, 10V
REACH Status REACH Unaffected
RoHS Status ROHS3 Compliant
Series QFETВ® ->
Supplier Device Package DВІPAK (TO-263AB)
Technology MOSFET (Metal Oxide)
Vgs (Max) В±20V
Vgs(th) (Max) @ Id 2V @ 250ВµA

Дополнительная информация

Datasheet FQB34N20LTM
Datasheet FQB34N20LTM

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