NTHD4508NG
460 руб.
от 2 шт. —
370 руб.
от 5 шт. —
307 руб.
от 10 шт. —
282.24 руб.
Добавить в корзину 1 шт.
на сумму 460 руб.
Описание
Электроэлемент
MOSFET, DUAL N CH, 20V, 0.06OHM, 4.1A; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:4.1A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.06ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.2V; Power Dissipation Pd:2.1W; Transistor Case Style:ChipFET; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-55°C
Технические параметры
| Brand | ON Semiconductor |
| Channel Mode | Enhancement |
| Configuration | Dual Dual Drain |
| Factory Pack Quantity | 3000 |
| Fall Time | 15 ns |
| Forward Transconductance - Min | 6 S |
| Id - Continuous Drain Current | 4.1 A |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Package / Case | ChipFET-8 |
| Packaging | Reel |
| Pd - Power Dissipation | 1.13 W |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 80 mOhms |
| Rise Time | 15 ns |
| RoHS | Details |
| Series | NTHD4508N |
| Transistor Polarity | N-Channel |
| Typical Turn-Off Delay Time | 10 ns |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Vgs - Gate-Source Breakdown Voltage | 12 V |
| Вес, г | 0.0647 |
Техническая документация
Datasheet NTHD4508NT1G
pdf, 120 КБ
