NTZD3155CG
286 шт. со склада г.Москва, срок 4-9 дней
140 руб.
Мин. кол-во для заказа 2 шт.
от 5 шт. —
81 руб.
от 10 шт. —
63 руб.
от 100 шт. —
45.75 руб.
Добавить в корзину 2 шт.
на сумму 280 руб.
Номенклатурный номер: 8002985391
Бренд: Нет торговой марки
Описание
Электроэлемент
MOSFET, NP CH, 20V, SOT-563; Transistor Polarity:N and P Channel; Continuous Drain Current Id:540mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.4ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Dissipation Pd:250mW; Transistor Case Style:SOT-563; No. of Pins:6Pins; Operating Temperature Max:150В°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-55В°C; Operating Temperature Range:-55В°C to +150В°C
Технические параметры
| Brand | ON Semiconductor |
| Channel Mode | Enhancement |
| Configuration | N-Channel, P-Channel |
| Factory Pack Quantity | 4000 |
| Fall Time | 4 ns, 12 ns |
| Height | 0.55 mm |
| Id - Continuous Drain Current | 540 mA |
| Length | 1.6 mm |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 2 Channel |
| Package / Case | SOT-563-6 |
| Packaging | Reel |
| Pd - Power Dissipation | 250 mW |
| Product | MOSFET Small Signal |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 550 mOhms, 900 mOhms |
| Rise Time | 4 ns, 12 ns |
| RoHS | Details |
| Series | NTZD3155C |
| Technology | Si |
| Transistor Polarity | N-Channel, P-Channel |
| Transistor Type | 1 N-Channel, 1 P-Channel |
| Typical Turn-Off Delay Time | 16 ns, 35 ns |
| Typical Turn-On Delay Time | 6 ns, 10 ns |
| Unit Weight | 0.000289 oz |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Vgs - Gate-Source Voltage | 6 V |
| Width | 1.2 mm |
| Вес, г | 0.04 |
Техническая документация
Документация
pdf, 114 КБ
Сроки доставки
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