PSMN027-100PS
20 шт. со склада г.Москва, срок 6-7 дней
560 руб.
от 2 шт. —
450 руб.
от 5 шт. —
375 руб.
от 10 шт. —
345.24 руб.
Добавить в корзину 1 шт.
на сумму 560 руб.
Номенклатурный номер: 8002986152
Бренд: Нет торговой марки
Описание
Электроэлемент
Power Field-Effect Transistor, 37A, 100V, 0.0268ohm, N-Channel MOSFET TO-220AB
Технические параметры
| Brand | Nexperia |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 1000 |
| Fall Time | 8.9 ns |
| Height | 9.4 mm |
| Id - Continuous Drain Current | 37 A |
| Length | 10.3 mm |
| Manufacturer | Nexperia |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package / Case | TO-220-3 |
| Packaging | Tube |
| Pd - Power Dissipation | 103 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 30 nC |
| Rds On - Drain-Source Resistance | 48 mOhms |
| Rise Time | 11.4 ns |
| RoHS | Details |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Type | N-Channel 100 V 26.8 mOhms Standard Level MOSFET in TO220 |
| Typical Turn-Off Delay Time | 29.6 ns |
| Typical Turn-On Delay Time | 14.4 ns |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 4.8 V |
| Width | 4.7 mm |
| Вес, г | 3.04 |
Техническая документация
Datasheet PSMN027-100PS,127
pdf, 800 КБ
Сроки доставки
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