2N7000G
234 шт. со склада г.Москва, срок 4-9 дней
110 руб.
Мин. кол-во для заказа 2 шт.
от 5 шт. —
57 руб.
от 10 шт. —
39 руб.
от 100 шт. —
23.44 руб.
Добавить в корзину 2 шт.
на сумму 220 руб.
Номенклатурный номер: 8002986274
Бренд: Нет торговой марки
Описание
Электроэлемент
2N7000-D75Z MOSFET, N CHANNEL, 200MA, 60V, TO-92; Transistor Polarity:N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.1V; Power Dissipation Pd:400mW; Transistor Case Style:TO-92; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:200mA; Current Temperature:25°C; Device Marking:2N7000; Full Power Rating Temperature:25°C; Lead Spacing:1.27mm; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:500mA; Voltage Vds Typ:60V; Voltage Vgs Max:2.1V; Voltage Vgs Rds on Measurement:10V
Технические параметры
| Base Part Number | 2N7000 |
| Current - Continuous Drain (Id) @ 25В°C | 200mA(Ta) |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V |
| Manufacturer | ON Semiconductor |
| Mounting Type | Through Hole |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Package / Case | TO-226-3, TO-92-3(TO-226AA)(Formed Leads) |
| Packaging | Cut Tape(CT) |
| Part Status | Active |
| Power Dissipation (Max) | 400mW(Ta) |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 500mA, 10V |
| Series | - |
| Supplier Device Package | TO-92-3 |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Вес, г | 0.3 |
Техническая документация
Документация
pdf, 286 КБ
Сроки доставки
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