NTMFS4927NG
240 руб.
Мин. кол-во для заказа 2 шт.
от 5 шт. —
180 руб.
от 10 шт. —
150 руб.
от 27 шт. —
136.08 руб.
Добавить в корзину 2 шт.
на сумму 480 руб.
Описание
Электроэлемент
MOSFET, N-CH, 30V, 38A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:38A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0057ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Dissipation Pd:20.8W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018)
Технические параметры
| Brand | ON Semiconductor |
| Configuration | Single |
| Factory Pack Quantity | 1500 |
| Forward Transconductance - Min | 40 s |
| Id - Continuous Drain Current | 38 A |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | SO-FL-8 |
| Packaging | Reel |
| Pd - Power Dissipation | 20.8 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 8 nC |
| Rds On - Drain-Source Resistance | 13.5 mOhms |
| RoHS | Details |
| Series | NTMFS4927N |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 1.6 V |
Техническая документация
Datasheet NTMFS4927NT1G
pdf, 173 КБ
