1 070 руб.
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Номенклатурный номер: 8002990097
Страна происхождения: КИТАЙ
Бренд / Производитель: ON Semiconductor***


IGBT,N CH,FAST W/DIO,600V,40A,TO-3PF; DC Collector Current:40A; Collector Emitter Saturation Voltage Vce(on):600V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-3PF; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Max:100W; Transistor Type:IGBT

Технические параметры

Brand ON Semiconductor/Fairchild
Collector- Emitter Voltage VCEO Max 600 V
Collector-Emitter Saturation Voltage 3 V
Configuration Single
Continuous Collector Current at 25 C 40 A
Continuous Collector Current Ic Max 40 A
Factory Pack Quantity 30
Gate-Emitter Leakage Current 100 nA
Height 16.7 mm
Length 15.7 mm
Manufacturer ON Semiconductor
Maximum Gate Emitter Voltage +/-20 V
Maximum Operating Temperature +150 C
Minimum Operating Temperature -55 C
Mounting Style Through Hole
Package / Case TO-3PF-3
Packaging Tube
Part # Aliases FGAF40N60UFTU_NL
Pd - Power Dissipation 100 W
Product Category IGBT Transistors
RoHS Details
Series FGAF40N60UF
Technology Si
Unit Weight 0.245577 oz
Width 5.7 mm
Вес, г 8