IRF9530SPBF, Trans MOSFET P-CH 100V 12A 3-Pin(2+Tab) D2PAK
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
150 руб.
Мин. кол-во для заказа 250 шт.
от 1309 шт. —
138 руб.
Добавить в корзину 250 шт.
на сумму 37 500 руб.
Альтернативные предложения1
Описание
Semiconductor - Discrete > Transistors > FET - MOSFET
Trans MOSFET P-CH 100V 12A 3-Pin(2+Tab) D2PAK
Технические параметры
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 12 |
| Maximum Diode Forward Voltage (V) | 6.3 |
| Maximum Drain Source Resistance (mOhm) | 300 10V |
| Maximum Drain Source Voltage (V) | 100 |
| Maximum Gate Resistance (Ohm) | 3.3 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum IDSS (uA) | 100 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 40 |
| Maximum Operating Temperature (°C) | 175 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Power Dissipation (mW) | 3700 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 3.7 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 48 |
| Minimum Gate Resistance (Ohm) | 0.4 |
| Minimum Gate Threshold Voltage (V) | 2 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Part Status | Active |
| PCB changed | 2 |
| Pin Count | 3 |
| PPAP | No |
| Product Category | Power MOSFET |
| Standard Package Name | TO-263 |
| Supplier Package | D2PAK |
| Tab | Tab |
| Typical Fall Time (ns) | 39 |
| Typical Gate Charge @ 10V (nC) | 38(Max) |
| Typical Gate Charge @ Vgs (nC) | 38(Max)10V |
| Typical Gate Plateau Voltage (V) | 6.8 |
| Typical Gate to Drain Charge (nC) | 21(Max) |
| Typical Gate to Source Charge (nC) | 6.8(Max) |
| Typical Input Capacitance @ Vds (pF) | 860 25V |
| Typical Output Capacitance (pF) | 340 |
| Typical Reverse Recovery Charge (nC) | 460 |
| Typical Reverse Recovery Time (ns) | 120 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 93 25V |
| Typical Rise Time (ns) | 52 |
| Typical Turn-Off Delay Time (ns) | 31 |
| Typical Turn-On Delay Time (ns) | 12 |
| Maximum Continuous Drain Current | 12 A |
| Maximum Drain Source Resistance | 300 mΩ |
| Maximum Drain Source Voltage | 100 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +175 °C |
| Maximum Power Dissipation | 3.7 W |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Package Type | D2PAK(TO-263) |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 38 nC @ 10 V |
| Width | 9.02mm |
| Current - Continuous Drain (Id) @ 25В°C | 12A(Tc) |
| Drain to Source Voltage (Vdss) | 100V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 860pF @ 25V |
| Manufacturer | Vishay Siliconix |
| Operating Temperature | -55В°C ~ 175В°C(TJ) |
| Package / Case | TO-263-3, DВІPak(2 Leads+Tab), TO-263AB |
| Packaging | Cut Tape(CT) |
| Power Dissipation (Max) | 3.7W(Ta), 88W(Tc) |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 7.2A, 10V |
| Series | - |
| Supplier Device Package | D2PAK |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 4V @ 250ВµA |
| Вес, кг | 193 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 139 КБ
Datasheet IRF9530SPBF
pdf, 209 КБ
Документация
pdf, 177 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
