BS107P

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5 шт. со склада г.Москва, срок 8-11 дней

310 руб.

от 2 шт. — 220 руб.

от 5 шт. — 162 руб.

Добавить в корзину 1 шт. на сумму 310 руб.

Номенклатурный номер: 8004053661

Бренд: Нет торговой марки

Электроэлемент

Описание Транзистор: N-MOSFET, полевой, 200В, 0,12А, 0,5Вт, TO92 Характеристики

Brand	Diodes Incorporated
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	4000
Height	4.01 mm
Id - Continuous Drain Current	120 mA
Length	4.77 mm
Manufacturer	Diodes Incorporated
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	Through Hole
Number of Channels	1 Channel
Package / Case	TO-92-3
Packaging	Bulk
Pd - Power Dissipation	500 mW
Product	MOSFET Small Signal
Product Category	MOSFET
Rds On - Drain-Source Resistance	15 Ohms
RoHS	Details
Series	BS107
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Type	FET
Vds - Drain-Source Breakdown Voltage	200 V
Vgs - Gate-Source Voltage	20 V
Width	2.41 mm
Brand:	Diodes Incorporated
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	4000
Fall Time:	8 ns
Forward Transconductance - Min:	100 mS
Id - Continuous Drain Current:	120 mA
Manufacturer:	Diodes Incorporated
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package / Case:	TO-92-3
Packaging:	Bulk
Pd - Power Dissipation:	500 mW
Product Category:	MOSFET
Product Type:	MOSFET
Product:	MOSFET Small Signals
Rds On - Drain-Source Resistance:	30 Ohms
Rise Time:	8 ns
Series:	BS107
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Type:	FET
Typical Turn-Off Delay Time:	16 ns
Typical Turn-On Delay Time:	7 ns
Vds - Drain-Source Breakdown Voltage:	200 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Вес, г	0.16