2N7002E-T1-E3, 60V 0.24A
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см. техническую документацию
см. техническую документацию
35 руб.
Кратность заказа 3000 шт.
от 6000 шт. —
32 руб.
от 9000 шт. —
31 руб.
от 15000 шт. —
29.80 руб.
Добавить в корзину 3000 шт.
на сумму 105 000 руб.
Технические параметры
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | NRND |
| HTS | 8541.29.00.95 |
| Product Category | Power MOSFET |
| Configuration | Single |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage (V) | 60 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Continuous Drain Current (A) | 0.24 |
| Maximum Drain Source Resistance (mOhm) | 3000@10V |
| Typical Gate Charge @ Vgs (nC) | 0.4@4.5V |
| Typical Input Capacitance @ Vds (pF) | 21@5V |
| Maximum Power Dissipation (mW) | 350 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tape and Reel |
| Automotive | No |
| Standard Package Name | SOT |
| Pin Count | 3 |
| Supplier Package | SOT-23 |
| Military | No |
| Mounting | Surface Mount |
| Package Height | 1.02(Max) |
| Package Length | 3.04(Max) |
| Package Width | 1.4(Max) |
| PCB changed | 3 |
| Lead Shape | Gull-wing |
| Brand | Vishay/Siliconix |
| Factory Pack Quantity | 3000 |
| Forward Transconductance - Min | 600 mS |
| Id - Continuous Drain Current | 240 mA |
| Manufacturer | Vishay |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number Of Channels | 1 Channel |
| Package / Case | SOT-23-3 |
| Part # Aliases | 2N7002E-E3 |
| Pd - Power Dissipation | 350 mW |
| Product Type | MOSFET |
| Qg - Gate Charge | 0.6 nC |
| Rds On - Drain-Source Resistance | 3 Ohms |
| Series | 2N7002E |
| Subcategory | MOSFETs |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 18 ns |
| Typical Turn-On Delay Time | 13 ns |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vgs - Gate-Source Voltage | 4.5 V |
| Vgs Th - Gate-Source Threshold Voltage | 1 V |
| Brand: | Vishay/Siliconix |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Forward Transconductance - Min: | 600 mS |
| Id - Continuous Drain Current: | 240 mA |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | SOT-23-3 |
| Part # Aliases: | 2N7002E-E3 |
| Pd - Power Dissipation: | 350 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 600 pC |
| Rds On - Drain-Source Resistance: | 3 Ohms |
| Series: | 2N7002E |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 18 ns |
| Typical Turn-On Delay Time: | 13 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
