APTGT100DA60T1G, IGBT Modules CC8064
15 300 руб.
Добавить в корзину 1 шт.
на сумму 15 300 руб.
Номенклатурный номер: 8004581590
Артикул: APTGT100DA60T1G
Страна происхождения: ТАИЛАНД
Бренд / Производитель: Microchip Technology
Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Modules
IGBT Power ModulesMicrochip IGBT Power Modules are a full range of IGBT power modules with different Trench and Field Stop generation offering optimized switching and conduction losses performance. Power module part numbers identify the type of IGBT employed. The Trench5 IGBT family complements Micochip's IGBT power module product offering and is the perfect replacement part for NPT IGBTs. Microchip SiC discrete and module products can be considered as alternative solutions for applications requiring switching frequencies above 20kHz.
Технические параметры
| Brand: | Microchip Technology |
| Collector- Emitter Voltage VCEO Max: | 600 V |
| Collector-Emitter Saturation Voltage: | 1.5 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 150 A |
| Factory Pack Quantity: Factory Pack Quantity: | 1 |
| Gate-Emitter Leakage Current: | 400 nA |
| Manufacturer: | Microchip |
| Maximum Gate Emitter Voltage: | 20 V |
| Maximum Operating Temperature: | +100 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Chassis Mount |
| Package/Case: | SP1-12 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 340 W |
| Product Category: | IGBT Modules |
| Product Type: | IGBT Modules |
| Product: | IGBT Silicon Modules |
| Subcategory: | IGBTs |
| Technology: | Si |
| Вес, г | 80 |
Техническая документация
Datasheet
pdf, 430 КБ
Datasheet APTGT100DA60T1G
pdf, 430 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
