STF100N10F7, MOSFET N-CH 100V 0.0068Ohm 80A STripFET VII
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
STripFET Power MOSFETsSTMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET technology with a new gate structure. The resulting STripFET Power MOSFET exhibits the high current and low R DS(on) required by automotive and industrial switching applications such as motor control, uninterruptible power supplies (UPS), DC/DC converters, induction heater vaporizers, and solar. STMicroelectronics STripFET Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses, and high power density.
Технические параметры
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Fall Time: | 15 ns |
| Id - Continuous Drain Current: | 45 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package/Case: | TO-220-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 30 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 61 nC |
| Rds On - Drain-Source Resistance: | 8 mOhms |
| Rise Time: | 40 ns |
| Series: | STF100N10F7 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | STripFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 46 ns |
| Typical Turn-On Delay Time: | 27 ns |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Base Product Number | STF100 -> |
| Current - Continuous Drain (Id) @ 25В°C | 45A (Tc) |
| Drain to Source Voltage (Vdss) | 100V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| ECCN | EAR99 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 61nC @ 10V |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 4369pF @ 50V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Through Hole |
| Operating Temperature | -55В°C ~ 175В°C (TJ) |
| Package | Tube |
| Package / Case | TO-220-3 Full Pack |
| Power Dissipation (Max) | 30W (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 22.5A, 10V |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Series | DeepGATEв„ў, STripFETв„ў VII -> |
| Supplier Device Package | TO-220FP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 4.5V @ 250ВµA |
| Channel Type | N Channel |
| Drain Source On State Resistance | 0.0068Ом |
| Power Dissipation | 30Вт |
| Количество Выводов | 3вывод(-ов) |
| Линейка Продукции | DeepGATE STripFET VII |
| Максимальная Рабочая Температура | 175 C |
| Монтаж транзистора | Through Hole |
| Напряжение Измерения Rds(on) | 10В |
| Напряжение Истока-стока Vds | 100В |
| Непрерывный Ток Стока | 45А |
| Полярность Транзистора | N Канал |
| Пороговое Напряжение Vgs | 4.5В |
| Рассеиваемая Мощность | 30Вт |
| Сопротивление во Включенном Состоянии Rds(on) | 0.0068Ом |
| Стиль Корпуса Транзистора | TO-220FP |
| Уровень Чувствительности к Влажности (MSL) | MSL 1-Безлимитный |
| Channel Mode | Enhancement |
| Maximum Continuous Drain Current | 45 A |
| Maximum Drain Source Resistance | 8 mΩ |
| Maximum Drain Source Voltage | 100 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Operating Temperature | +175 °C |
| Maximum Power Dissipation | 30 W |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature | -55 °C |
| Number of Elements per Chip | 1 |
| Package Type | TO-220FP |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 61 nC @ 10 V |
| Width | 4.6mm |
| Automotive | No |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | Through Hole |
| Maximum Continuous Drain Current (A) | 80 |
| Maximum Drain Source Resistance (mOhm) | 8@10V |
| Maximum Drain Source Voltage (V) | 100 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 4.5 |
| Maximum IDSS (uA) | 10 |
| Maximum Operating Temperature (°C) | 175 |
| Maximum Power Dissipation (mW) | 150000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Through Hole |
| Packaging | Tube |
| Part Status | Active |
| PCB changed | 3 |
| PPAP | No |
| Process Technology | STripFET F7 |
| Product Category | Power MOSFET |
| Standard Package Name | TO |
| Supplier Package | TO-220FP |
| Supplier Temperature Grade | Industrial |
| Tab | Tab |
| Typical Fall Time (ns) | 15 |
| Typical Gate Charge @ 10V (nC) | 56 |
| Typical Gate Charge @ Vgs (nC) | 56@10V |
| Typical Input Capacitance @ Vds (pF) | 4369@50V |
| Typical Rise Time (ns) | 40 |
| Typical Turn-Off Delay Time (ns) | 46 |
| Typical Turn-On Delay Time (ns) | 27 |
| Вес, г | 2 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 633 КБ
Datasheet
pdf, 707 КБ
Datasheet STF100N10F7
pdf, 1518 КБ
Datasheet STF100N10F7
pdf, 648 КБ
Datasheet STF100N10F7
pdf, 1662 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
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