STF100N10F7, MOSFET N-CH 100V 0.0068Ohm 80A STripFET VII
* Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
732 шт., срок 9-11 недель
920 руб.
от 10 шт. —
770 руб.
от 100 шт. —
586 руб.
от 500 шт. —
409.12 руб.
Добавить в корзину 1 шт.
на сумму 920 руб.
Посмотреть альтернативные предложения4
Номенклатурный номер: 8004583808
Артикул: STF100N10F7
Страна происхождения: КИТАЙ
Бренд / Производитель: STMicroelectronics
Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
STripFET Power MOSFETsSTMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET technology with a new gate structure. The resulting STripFET Power MOSFET exhibits the high current and low R DS(on) required by automotive and industrial switching applications such as motor control, uninterruptible power supplies (UPS), DC/DC converters, induction heater vaporizers, and solar. STMicroelectronics STripFET Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses, and high power density.
Технические параметры
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Fall Time: | 15 ns |
| Id - Continuous Drain Current: | 45 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package/Case: | TO-220-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 30 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 61 nC |
| Rds On - Drain-Source Resistance: | 8 mOhms |
| Rise Time: | 40 ns |
| Series: | STF100N10F7 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | STripFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 46 ns |
| Typical Turn-On Delay Time: | 27 ns |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Base Product Number | STF100 -> |
| Current - Continuous Drain (Id) @ 25В°C | 45A (Tc) |
| Drain to Source Voltage (Vdss) | 100V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| ECCN | EAR99 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 61nC @ 10V |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 4369pF @ 50V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Through Hole |
| Operating Temperature | -55В°C ~ 175В°C (TJ) |
| Package | Tube |
| Package / Case | TO-220-3 Full Pack |
| Power Dissipation (Max) | 30W (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 22.5A, 10V |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Series | DeepGATEв„ў, STripFETв„ў VII -> |
| Supplier Device Package | TO-220FP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 4.5V @ 250ВµA |
| Channel Type | N Channel |
| Drain Source On State Resistance | 0.0068Ом |
| Power Dissipation | 30Вт |
| Количество Выводов | 3вывод(-ов) |
| Линейка Продукции | DeepGATE STripFET VII |
| Максимальная Рабочая Температура | 175 C |
| Монтаж транзистора | Through Hole |
| Напряжение Измерения Rds(on) | 10В |
| Напряжение Истока-стока Vds | 100В |
| Непрерывный Ток Стока | 45А |
| Полярность Транзистора | N Канал |
| Пороговое Напряжение Vgs | 4.5В |
| Рассеиваемая Мощность | 30Вт |
| Сопротивление во Включенном Состоянии Rds(on) | 0.0068Ом |
| Стиль Корпуса Транзистора | TO-220FP |
| Уровень Чувствительности к Влажности (MSL) | MSL 1-Безлимитный |
| Channel Mode | Enhancement |
| Maximum Continuous Drain Current | 45 A |
| Maximum Drain Source Resistance | 8 mΩ |
| Maximum Drain Source Voltage | 100 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Operating Temperature | +175 °C |
| Maximum Power Dissipation | 30 W |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature | -55 °C |
| Number of Elements per Chip | 1 |
| Package Type | TO-220FP |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 61 nC @ 10 V |
| Width | 4.6mm |
| Вес, г | 2 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
Выберите регион, чтобы увидеть способы получения товара.
