FDS8813NZ, MOSFET 30 Volt N-Ch PowerTrench MOSFET

Изображения служат только для ознакомления,
см. техническую документацию

370 руб.

от 10 шт. — 300 руб.

от 100 шт. — 230 руб.

от 500 шт. — 188.20 руб.

Добавить в корзину 1 шт. на сумму 370 руб.

Номенклатурный номер: 8004673911

Артикул: FDS8813NZ

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

Описание Транзистор: N-MOSFET; полевой; 30В; 18,5А; 2,5Вт; SO8

Brand:	onsemi/Fairchild
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	2500
Fall Time:	7 ns
Forward Transconductance - Min:	74 S
Id - Continuous Drain Current:	18.5 A
Manufacturer:	onsemi
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	SOIC-8
Pd - Power Dissipation:	2.5 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	76 nC
Rds On - Drain-Source Resistance:	4.5 mOhms
Rise Time:	8 ns
Series:	FDS8813NZ
Subcategory:	MOSFETs
Technology:	Si
Tradename:	PowerTrench
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	39 ns
Typical Turn-On Delay Time:	13 ns
Vds - Drain-Source Breakdown Voltage:	30 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	18.5 A
Maximum Drain Source Resistance	6.6 mΩ
Maximum Drain Source Voltage	30 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	2.5 W
Minimum Gate Threshold Voltage	1V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOIC
Pin Count	8
Series	PowerTrench
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	28 nC @ 5 V, 55 nC @ 10 V
Width	3.9mm
Вес, г	0.187