BS107PSTZ, MOSFET N-Chnl 200V
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см. техническую документацию
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Описание Транзистор: N-MOSFET, полевой, 200В, 0,12А, 0,5Вт, TO92 Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Brand: | Diodes Incorporated |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2000 |
| Id - Continuous Drain Current: | 120 mA |
| Manufacturer: | Diodes Incorporated |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-92-3 |
| Packaging: | Ammo Pack |
| Pd - Power Dissipation: | 500 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | MOSFET Small Signals |
| Rds On - Drain-Source Resistance: | 15 Ohms |
| Series: | BS107 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | FET |
| Vds - Drain-Source Breakdown Voltage: | 200 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Current - Continuous Drain (Id) @ 25В°C | 120mA(Ta) |
| Drain to Source Voltage (Vdss) | 200V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.6V, 5V |
| FET Feature | - |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 85pF @ 25V |
| Manufacturer | Diodes Incorporated |
| Mounting Type | Through Hole |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Package / Case | E-Line-3 |
| Packaging | Cut Tape(CT) |
| Part Status | Active |
| Power Dissipation (Max) | 500mW(Ta) |
| Rds On (Max) @ Id, Vgs | 30 Ohm @ 100mA, 5V |
| Series | Automotive, AEC-Q101 |
| Supplier Device Package | E-Line(TO-92 compatible) |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | - |
| Case | TO92 |
| Drain current | 0.12A |
| Drain-source voltage | 200V |
| Gate-source voltage | ±20V |
| Kind of channel | enhanced |
| Kind of package | Ammo Pack |
| Mounting | THT |
| On-state resistance | 23Ω |
| Polarisation | unipolar |
| Power dissipation | 0.5W |
| Type of transistor | N-MOSFET |
| Вес, г | 0.45 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
