IRF530STRRPBF
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см. техническую документацию
см. техническую документацию
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Технические параметры
| Brand: | Vishay Semiconductors |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 800 |
| Fall Time: | 24 ns |
| Forward Transconductance - Min: | 5.1 S |
| Id - Continuous Drain Current: | 14 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | D2PAK-3(TO-263-3) |
| Pd - Power Dissipation: | 88 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 26 nC |
| Rds On - Drain-Source Resistance: | 160 mOhms |
| Rise Time: | 34 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Typical Turn-Off Delay Time: | 23 ns |
| Typical Turn-On Delay Time: | 10 ns |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
Техническая документация
Datasheet
pdf, 212 КБ
