AUIRF7342QTR, MOSFET AUTO -55V 1 N-CH HEXFET 105mOhms
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Описание
Trans MOSFET P-CH 55V 3.4A Automotive AEC-Q101 8-Pin SOIC T/R
Технические параметры
Automotive | Yes |
Channel Mode | Enhancement |
Channel Type | P |
Configuration | Dual Dual Drain |
ECCN (US) | EAR99 |
EU RoHS | Compliant |
Lead Shape | Gull-wing |
Maximum Continuous Drain Current (A) | 3.4 |
Maximum Drain Source Resistance (mOhm) | 105@10V |
Maximum Drain Source Voltage (V) | 55 |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Gate Threshold Voltage (V) | 3 |
Maximum IDSS (uA) | 2 |
Maximum Operating Temperature (°C) | 150 |
Maximum Power Dissipation (mW) | 2000 |
Minimum Operating Temperature (°C) | -55 |
Mounting | Surface Mount |
Number of Elements per Chip | 2 |
Packaging | Tape and Reel |
Part Status | NRND |
PCB changed | 8 |
Pin Count | 8 |
PPAP | Unknown |
Process Technology | HEXFET |
Product Category | Power MOSFET |
Standard Package Name | SO |
Supplier Package | SOIC |
Supplier Temperature Grade | Automotive |
Typical Fall Time (ns) | 22 |
Typical Gate Charge @ 10V (nC) | 26 |
Typical Gate Charge @ Vgs (nC) | 26@10V |
Typical Input Capacitance @ Vds (pF) | 690@25V |
Typical Rise Time (ns) | 10 |
Typical Turn-Off Delay Time (ns) | 43 |
Typical Turn-On Delay Time (ns) | 14 |
Вес, г | 0.5066 |
Техническая документация
Datasheet
pdf, 256 КБ