AUIRF7342QTR, MOSFET AUTO -55V 1 N-CH HEXFET 105mOhms
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Описание
Trans MOSFET P-CH 55V 3.4A Automotive AEC-Q101 8-Pin SOIC T/R
Технические параметры
| Automotive | Yes |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Dual Dual Drain |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 3.4 |
| Maximum Drain Source Resistance (mOhm) | 105@10V |
| Maximum Drain Source Voltage (V) | 55 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 3 |
| Maximum IDSS (uA) | 2 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 2000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 2 |
| Packaging | Tape and Reel |
| Part Status | NRND |
| PCB changed | 8 |
| Pin Count | 8 |
| PPAP | Unknown |
| Process Technology | HEXFET |
| Product Category | Power MOSFET |
| Standard Package Name | SO |
| Supplier Package | SOIC |
| Supplier Temperature Grade | Automotive |
| Typical Fall Time (ns) | 22 |
| Typical Gate Charge @ 10V (nC) | 26 |
| Typical Gate Charge @ Vgs (nC) | 26@10V |
| Typical Input Capacitance @ Vds (pF) | 690@25V |
| Typical Rise Time (ns) | 10 |
| Typical Turn-Off Delay Time (ns) | 43 |
| Typical Turn-On Delay Time (ns) | 14 |
| Вес, г | 0.5066 |
Техническая документация
Datasheet
pdf, 256 КБ
